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寻找掺杂镍的氧化锌纳米结构中室温铁磁性的起源。

Search for Origin of Room Temperature Ferromagnetism Properties in Ni-Doped ZnO Nanostructure.

机构信息

Discipline of Physics & Metallurgical Engineering and Materials Science, Indian Institute of Technology Indore , Khandwa Road, Simrol Campus, Indore 453552, India.

Atomic & Molecular Physics Division, Bhabha Atomic Research Centre , Trombay, Mumbai 400085, India.

出版信息

ACS Appl Mater Interfaces. 2017 Mar 1;9(8):7691-7700. doi: 10.1021/acsami.6b12616. Epub 2017 Feb 16.

Abstract

The origin of room temperature (RT) ferromagnetism (FM) in ZnNiO (0< x < 0.125) samples are systematically investigated through physical, optical, and magnetic properties of nanostructure, prepared by simple low-temperature wet chemical method. Reitveld refinement of X-ray diffraction pattern displays an increase in lattice parameters with strain relaxation and contraction in Zn/O occupancy ratio by means of Ni-doping. Similarly, scanning electron microscope demonstrates modification in the morphology from nanorods to nanoflakes with Ni doping, suggests incorporation of Ni ions in ZnO. More interestingly, XANES (X-ray absorption near edge spectroscopy) measurements confirm that Ni is being incorporated in ZnO as Ni. EXAFS (extended X-ray absorption fine structure) analysis reveals that structural disorders near the Zn sites in the ZnO samples upsurges with increasing Ni concentration. Raman spectroscopy exhibits additional defect driven vibrational mode (at 275 cm), appeared only in Ni-doped samples and the shift with broadening in 580 cm peak, which manifests the presence of the oxygen vacancy (V) related defects. Moreover, in photoluminescence (PL) spectra, we have observed a peak at 524 nm, indicating the presence of singly ionized V, which may be activating bound magnetic polarons (BMPs) in dilute magnetic semiconductors (DMSs). Magnetization measurements indicate weak ferromagnetism at RT, which rises with increasing Ni concentration. It is therefore proposed that the effect of the Ni ions as well as the inherent exchange interactions arising from V assist to produce BMPs, which are accountable for the RT-FM in ZnNiO (0< x < 0.125) system.

摘要

通过简单的低温湿法化学方法制备的纳米结构的物理、光学和磁性特性,系统研究了 ZnNiO(0<x<0.125)样品中室温(RT)铁磁性(FM)的起源。X 射线衍射图谱的 Rietveld 精修显示晶格参数随应变弛豫而增加,并且 Ni 掺杂导致 Zn/O 占位比收缩。同样,扫描电子显微镜显示,随着 Ni 掺杂,形貌从纳米棒变为纳米片,表明 Ni 离子掺入 ZnO 中。更有趣的是,XANES(X 射线吸收近边光谱)测量证实 Ni 以 Ni 的形式掺入 ZnO 中。EXAFS(扩展 X 射线吸收精细结构)分析表明,随着 Ni 浓度的增加,ZnO 样品中 Zn 位附近的结构无序程度增加。拉曼光谱显示,在 Ni 掺杂样品中仅出现的额外缺陷驱动振动模式(在 275 cm 处),以及在 580 cm 峰处的位移和展宽,表明存在与氧空位(V)相关的缺陷。此外,在光致发光(PL)光谱中,我们观察到 524nm 处的峰,表明存在单电离 V,这可能会激活稀磁半导体(DMS)中的束缚磁极化子(BMP)。磁化测量表明,室温下存在弱铁磁性,且随着 Ni 浓度的增加而增加。因此,提出 Ni 离子的影响以及 V 产生的固有交换相互作用有助于产生 BMP,这是 ZnNiO(0<x<0.125)体系中 RT-FM 的原因。

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