Wang Fenglong, Zhou Cai, Gesang Dunzhu, Jiang Changjun
Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou, 730000, People's Republic of China.
Nanoscale Res Lett. 2017 Dec;12(1):104. doi: 10.1186/s11671-017-1866-6. Epub 2017 Feb 9.
Herein, we demonstrated an apparent electric field control of magnetization reorientation at room temperature, through a strain-mediated magnetoelectric coupling in ferromagnetic/ferroelectric (FM/FE) multiferroic heterostructure. As the applied electric field increased, the magnetization tended to deviate from the original direction, which was induced by nonlinear strain vs electric-field behavior from the ferroelectric substrates. Ferromagnetic resonance showed that the in-plane magnetic easy axis of the Co film was shifted sharply with electric field E = 10 kV/cm, which indicates that the in-plane uniaxial magnetic anisotropy of the Co film can be inverted via the application of an electric field. These results demonstrated that converse magnetoelectric effect in the FM/FE heterostructure was indeed a feasible method to control magnetization orientation in technologically relevant ferromagnetic thin films at room temperature.
在此,我们通过铁磁/铁电(FM/FE)多铁性异质结构中的应变介导磁电耦合,展示了室温下磁化重新取向的明显电场控制。随着外加电场增加,磁化强度倾向于偏离由铁电衬底的非线性应变与电场行为所诱导的原始方向。铁磁共振表明,在电场E = 10 kV/cm时,Co膜的面内易磁化轴急剧移动,这表明通过施加电场可以反转Co膜的面内单轴磁各向异性。这些结果表明,FM/FE异质结构中的逆磁电效应确实是在室温下控制技术相关铁磁薄膜中磁化取向的一种可行方法。