Abd-Elrahman M I, Abu-Sehly A A, Bakier Y M, Hafiz M M
Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt.
Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt.
Spectrochim Acta A Mol Biomol Spectrosc. 2017 Sep 5;184:243-248. doi: 10.1016/j.saa.2017.05.013. Epub 2017 May 9.
Chalcogenide-alkali metal semiconducting thin films of four different thicknesses of SeTe(NaCl) are deposited from bulk by thermal evaporation technique. The crystallinity of the film improves with increasing of thickness as indicated by the recorded X-ray diffraction patterns. The transmission and reflection spectra are measured in the wavelength range of the incident photons from 250 to 2500nm. The thickness and optical constants of the films are calculated based on Swanepeol method using the interference patterns appeared in the transmission spectra. It is found that the films have absorption mechanism which is an indirect allowed transition. The effect of the film thickness on the refractive index and the high-frequency dielectric constant are studied. With increasing the film thickness, both the absorption coefficient and high-frequency dielectric constant increase while the single-oscillator energy, optical band gap and extinction coefficient decrease.
通过热蒸发技术从块状材料中沉积出四种不同厚度的硫族化物 - 碱金属半导体薄膜SeTe(NaCl)。如记录的X射线衍射图谱所示,薄膜的结晶度随着厚度的增加而提高。在250至2500nm的入射光子波长范围内测量了透射光谱和反射光谱。基于斯旺佩尔方法,利用透射光谱中出现的干涉图样计算了薄膜的厚度和光学常数。发现这些薄膜具有间接允许跃迁的吸收机制。研究了薄膜厚度对折射率和高频介电常数的影响。随着薄膜厚度的增加,吸收系数和高频介电常数均增加,而单振子能量、光学带隙和消光系数减小。