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具有部分蚀刻氧化锌薄膜的压电微机电超声换能器(pMUT)的设计与制造

Design and Fabrication of Piezoelectric Micromachined Ultrasound Transducer (pMUT) with Partially-Etched ZnO Film.

作者信息

Li Junhong, Ren Wei, Fan Guoxiang, Wang Chenghao

机构信息

State Key Laboratory of Acoustics, Institute of Acoustics, Chinese Academy of Science, Beijing 100190, China.

出版信息

Sensors (Basel). 2017 Jun 14;17(6):1381. doi: 10.3390/s17061381.

Abstract

A square piezoelectric composite diaphragm was analyzed by the finite element method to enhance the sensitivity of a piezoelectric micromachined ultrasound transducer (pMUT). The structures of electrode and piezoelectric film were optimized and a centric electrode was designed to avoid the counteraction of stress in the centre and edges. In order to further improve the sensitivity; a pMUT with partially-etched piezoelectric film was adopted. The receive and transmit sensitivities of the pMUT were analyzed in details. The receive sensitivity of pMUT with partially-etched ZnO film is 3.3 dB or 6.8 dB higher than those with a centric and whole electrode, respectively; and the amplitude of a partially-etched ZnO film pMUT under a certain voltage is 5.5 dB and 30 dB higher than those with centric and whole electrode separately. Two pMUT-based ZnO films were fabricated by micromachining technology and their receive and transmit sensitivities were tested. The ZnO films deposited by direct current (DC) magnetron sputtering exhibit a densely packed structure with columnar crystallites. The test results show that the structure of the square diaphragm with partially-etched piezoelectric layer can significantly improve the transducer sensitivity. The receive sensitivity and transmit sensitivity are -238.35 dB (ref. 1 V/μPa) and 150.42 dB (ref. 1 μPa/V); respectively.

摘要

为提高压电微机械超声换能器(pMUT)的灵敏度,采用有限元方法对方形压电复合膜片进行了分析。对电极和压电薄膜的结构进行了优化,设计了中心电极以避免中心和边缘应力的抵消作用。为进一步提高灵敏度,采用了具有部分蚀刻压电薄膜的pMUT。详细分析了pMUT的接收和发射灵敏度。具有部分蚀刻ZnO薄膜的pMUT的接收灵敏度分别比具有中心电极和完整电极的pMUT高3.3 dB或6.8 dB;在一定电压下,具有部分蚀刻ZnO薄膜的pMUT的振幅分别比具有中心电极和完整电极的pMUT高5.5 dB和30 dB。通过微加工技术制备了两种基于pMUT的ZnO薄膜,并测试了它们的接收和发射灵敏度。直流(DC)磁控溅射沉积的ZnO薄膜呈现出具有柱状微晶的致密堆积结构。测试结果表明,具有部分蚀刻压电层的方形膜片结构可显著提高换能器灵敏度。接收灵敏度和发射灵敏度分别为-238.35 dB(参考1 V/μPa)和150.42 dB(参考1 μPa/V)。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/80ac/5492404/f8afca9e51fb/sensors-17-01381-g001.jpg

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