Li Junhong, Ren Wei, Fan Guoxiang, Wang Chenghao
State Key Laboratory of Acoustics, Institute of Acoustics, Chinese Academy of Science, Beijing 100190, China.
Sensors (Basel). 2017 Jun 14;17(6):1381. doi: 10.3390/s17061381.
A square piezoelectric composite diaphragm was analyzed by the finite element method to enhance the sensitivity of a piezoelectric micromachined ultrasound transducer (pMUT). The structures of electrode and piezoelectric film were optimized and a centric electrode was designed to avoid the counteraction of stress in the centre and edges. In order to further improve the sensitivity; a pMUT with partially-etched piezoelectric film was adopted. The receive and transmit sensitivities of the pMUT were analyzed in details. The receive sensitivity of pMUT with partially-etched ZnO film is 3.3 dB or 6.8 dB higher than those with a centric and whole electrode, respectively; and the amplitude of a partially-etched ZnO film pMUT under a certain voltage is 5.5 dB and 30 dB higher than those with centric and whole electrode separately. Two pMUT-based ZnO films were fabricated by micromachining technology and their receive and transmit sensitivities were tested. The ZnO films deposited by direct current (DC) magnetron sputtering exhibit a densely packed structure with columnar crystallites. The test results show that the structure of the square diaphragm with partially-etched piezoelectric layer can significantly improve the transducer sensitivity. The receive sensitivity and transmit sensitivity are -238.35 dB (ref. 1 V/μPa) and 150.42 dB (ref. 1 μPa/V); respectively.
为提高压电微机械超声换能器(pMUT)的灵敏度,采用有限元方法对方形压电复合膜片进行了分析。对电极和压电薄膜的结构进行了优化,设计了中心电极以避免中心和边缘应力的抵消作用。为进一步提高灵敏度,采用了具有部分蚀刻压电薄膜的pMUT。详细分析了pMUT的接收和发射灵敏度。具有部分蚀刻ZnO薄膜的pMUT的接收灵敏度分别比具有中心电极和完整电极的pMUT高3.3 dB或6.8 dB;在一定电压下,具有部分蚀刻ZnO薄膜的pMUT的振幅分别比具有中心电极和完整电极的pMUT高5.5 dB和30 dB。通过微加工技术制备了两种基于pMUT的ZnO薄膜,并测试了它们的接收和发射灵敏度。直流(DC)磁控溅射沉积的ZnO薄膜呈现出具有柱状微晶的致密堆积结构。测试结果表明,具有部分蚀刻压电层的方形膜片结构可显著提高换能器灵敏度。接收灵敏度和发射灵敏度分别为-238.35 dB(参考1 V/μPa)和150.42 dB(参考1 μPa/V)。