Department of Chemistry, National Central University, Taoyuan, 32001, Taiwan.
Department of Chemical and Materials Engineering, National Central University, Taoyuan, 32001, Taiwan.
Adv Mater. 2017 Sep;29(35). doi: 10.1002/adma.201702414. Epub 2017 Jul 14.
New 3,3'-dithioalkyl-2,2'-bithiophene (SBT)-based small molecular and polymeric semiconductors are synthesized by end-capping or copolymerization with dithienothiophen-2-yl units. Single-crystal, molecular orbital computations, and optical/electrochemical data indicate that the SBT core is completely planar, likely via S(alkyl)⋯S(thiophene) intramolecular locks. Therefore, compared to semiconductors based on the conventional 3,3'-dialkyl-2,2'-bithiophene, the resulting SBT systems are planar (torsional angle <1°) and highly π-conjugated. Charge transport is investigated for solution-sheared films in field-effect transistors demonstrating that SBT can enable good semiconducting materials with hole mobilities ranging from ≈0.03 to 1.7 cm V s . Transport difference within this family is rationalized by film morphology, as accessed by grazing incidence X-ray diffraction experiments.
新型 3,3′-二硫代烷基-2,2′-联噻吩（SBT）基小分子和聚合物半导体通过二噻吩并[3,2-b:2′,3′-d]噻吩单元的末端封端或共聚合成。单晶、分子轨道计算和光学/电化学数据表明，SBT 核完全是平面的，可能是通过 S(烷基)⋯S(噻吩)分子内锁实现的。因此，与基于传统 3,3′-二烷基-2,2′-联噻吩的半导体相比，所得的 SBT 体系是平面的（扭转角<1°）和高度 π 共轭的。通过在场效应晶体管中对溶液剪切薄膜进行电荷输运研究表明，SBT 可以实现具有空穴迁移率约为 0.03 至 1.7 cm V s 的良好半导体材料。通过掠入射 X 射线衍射实验可以了解到，通过膜形态可以合理地解释该系列中的传输差异。
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