Functional Ceramics Department, Korea Institute of Materials Science, 797 Changwon-daero, Seongsan-gu, Changwon, Gyeong-Nam, 51508, Republic of Korea.
School of Materials Science and Engineering, Pusan National University, 2, Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea.
Sci Rep. 2017 Jul 26;7(1):6637. doi: 10.1038/s41598-017-06774-z.
A ceramic substrate must not only have an excellent thermal performance but also be thin, since the electronic devices have to become thin and small in the electronics industry of the next generation. In this manuscript, a thin ceramic substrate (thickness: 30-70 µm) is reported for the next generation ceramic substrate. It is fabricated by a new process [granule spray in vacuum (GSV)] which is a room temperature process. For the thin ceramic substrates, AlN GSV films are deposited on Al substrates and their electric/thermal properties are compared to those of the commercial ceramic substrates. The thermal resistance is significantly reduced by using AlN GSV films instead of AlN bulk-ceramics in thermal management systems. It is due to the removal of a thermal interface material which has low thermal conductivity. In particular, the dielectric strengths of AlN GSV films are much higher than those of AlN bulk-ceramics which are commercialized, approximately 5 times. Therefore, it can be expected that this GSV film is a next generation substrate in thermal management systems for the high power application.
陶瓷基板不仅必须具有优异的热性能,而且还必须很薄,因为在下一代电子行业中,电子设备必须变得又薄又小。在本文中,报道了一种用于下一代陶瓷基板的薄陶瓷基板(厚度:30-70μm)。它是通过一种新的工艺[真空颗粒喷涂(GSV)]制造的,该工艺是在室温下进行的。对于薄陶瓷基板,在 Al 基板上沉积了 AlN GSV 薄膜,并将其电/热性能与商用陶瓷基板进行了比较。在热管理系统中,使用 AlN GSV 薄膜代替 AlN 块状陶瓷,可显著降低热阻。这是因为去除了具有低热导率的热界面材料。特别是,AlN GSV 薄膜的介电强度远高于已商业化的 AlN 块状陶瓷,大约高 5 倍。因此,可以预期,这种 GSV 薄膜将成为用于高功率应用的热管理系统中的下一代基板。