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具有杂质自旋轨道相互作用的拓扑材料中的弱局域化和反局域化

Weak Localization and Antilocalization in Topological Materials with Impurity Spin-Orbit Interactions.

作者信息

Liu Weizhe Edward, Hankiewicz Ewelina M, Culcer Dimitrie

机构信息

School of Physics and Australian Research Council Centre of Excellence in Low-Energy ElectronicsTechnologies, UNSW Node, The University of New South Wales, Sydney 2052, Australia.

Institute for Theoretical Physics and Astrophysics, Würzburg University, Am Hubland, 97074 Würzburg,Germany.

出版信息

Materials (Basel). 2017 Jul 15;10(7):807. doi: 10.3390/ma10070807.

Abstract

Topological materials have attracted considerable experimental and theoretical attention. They exhibit strong spin-orbit coupling both in the band structure (intrinsic) and in the impurity potentials (extrinsic), although the latter is often neglected. In this work, we discuss weak localization and antilocalization of massless Dirac fermions in topological insulators and massive Dirac fermions in Weyl semimetal thin films, taking into account both intrinsic and extrinsic spin-orbit interactions. The physics is governed by the complex interplay of the chiral spin texture, quasiparticle mass, and scalar and spin-orbit scattering. We demonstrate that terms linear in the extrinsic spin-orbit scattering are generally present in the Bloch and momentum relaxation times in all topological materials, and the correction to the diffusion constant is linear in the strength of the extrinsic spin-orbit. In topological insulators, which have zero quasiparticle mass, the terms linear in the impurity spin-orbit coupling lead to an observable density dependence in the weak antilocalization correction. They produce substantial qualitative modifications to the magnetoconductivity, differing greatly from the conventional Hikami-Larkin-Nagaoka formula traditionally used in experimental fits, which predicts a crossover from weak localization to antilocalization as a function of the extrinsic spin-orbit strength. In contrast, our analysis reveals that topological insulators always exhibit weak antilocalization. In Weyl semimetal thin films having intermediate to large values of the quasiparticle mass, we show that extrinsic spin-orbit scattering strongly affects the boundary of the weak localization to antilocalization transition. We produce a complete phase diagram for this transition as a function of the mass and spin-orbit scattering strength. Throughout the paper, we discuss implications for experimental work, and, at the end, we provide a brief comparison with transition metal dichalcogenides.

摘要

拓扑材料已经引起了相当多的实验和理论关注。它们在能带结构(本征)和杂质势(非本征)中都表现出很强的自旋轨道耦合,尽管后者常常被忽略。在这项工作中,我们讨论了拓扑绝缘体中无质量狄拉克费米子以及外尔半金属薄膜中有质量狄拉克费米子的弱局域化和反局域化,同时考虑了本征和非本征自旋轨道相互作用。其物理过程由手性自旋纹理、准粒子质量以及标量和自旋轨道散射之间复杂的相互作用所支配。我们证明,在所有拓扑材料的布洛赫和动量弛豫时间中,通常都存在与非本征自旋轨道散射成线性关系的项,并且对扩散常数的修正与非本征自旋轨道强度成线性关系。在准粒子质量为零的拓扑绝缘体中,与杂质自旋轨道耦合成线性关系的项会导致在弱反局域化修正中出现可观测的密度依赖性。它们对磁导率产生了实质性的定性修改,与传统上用于实验拟合的常规日高 - 拉金 - 长冈公式有很大不同,该公式预测随着非本征自旋轨道强度的变化会从弱局域化转变为反局域化。相比之下,我们的分析表明拓扑绝缘体总是表现出弱反局域化。在准粒子质量为中等至较大值的外尔半金属薄膜中,我们表明非本征自旋轨道散射强烈影响弱局域化到反局域化转变的边界。我们给出了作为质量和自旋轨道散射强度函数的该转变的完整相图。在整篇论文中,我们讨论了对实验工作的影响,并且在结尾处,我们与过渡金属二硫属化物进行了简要比较。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/815d/5551850/54d83e4e069b/materials-10-00807-g001.jpg

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