基于氧化锌微线的激子极化激元发光二极管。

Exciton-polariton light-emitting diode based on a ZnO microwire.

作者信息

Zhang Zhe, Wang Yinglei, Yin Shaoyi, Hu Tao, Wang Yafeng, Liao Liming, Luo Song, Wang Jun, Zhang Xiaoyu, Ni Peinan, Shen Xuechu, Shan Chongxin, Chen Zhanghai

出版信息

Opt Express. 2017 Jul 24;25(15):17375-17381. doi: 10.1364/OE.25.017375.

DOI:10.1364/OE.25.017375

PMID:28789229

Abstract

Room temperature electrically pumped exciton-polariton light-emitting diode (LED) based on the n-ZnO microwire/MgO/p-GaN heterojunction was fabricated. With the injection current of 1.5 mA, the ultraviolet electroluminescence centered at wavelength of 400 nm is obtained. The whispering gallery cavity model combined with the coupling oscillator model is used to describe the emission intensity modulation, from which the strong coupling regime of the system is proved to be surviving at room temperature.

摘要

基于n-ZnO微线/MgO/p-GaN异质结的室温电泵浦激子-极化激元发光二极管（LED）被制备出来。在注入电流为1.5 mA时，获得了中心波长为400 nm的紫外电致发光。采用回音壁腔模型与耦合振荡器模型相结合来描述发射强度调制，由此证明该系统的强耦合状态在室温下依然存在。