朝向直接生长在硅衬底上的砷化铟/铟镓砷/砷化镓量子点太阳能电池。

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate.

作者信息

Azeza Bilel, Hadj Alouane Mohamed Helmi, Ilahi Bouraoui, Patriarche Gilles, Sfaxi Larbi, Fouzri Afif, Maaref Hassen, M'ghaieth Ridha

机构信息

Laboratoire Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Monatir 5019, Tunisia.

Turaif Sciences College, Northern Borders University, P.O. 833, Turaif 91411, Kingdom of Saudi Arabia.

出版信息

Materials (Basel). 2015 Jul 22;8(7):4544-4552. doi: 10.3390/ma8074544.

DOI:10.3390/ma8074544

PMID:28793455

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5455635/

Abstract

This paper reports on an initial assessment of the direct growth of In(Ga)As/GaAs quantum dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam epitaxy (MBE). The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region of the heterojunction pin-GaAs/n⁺-Si was evaluated using photocurrent spectroscopy in comparison with pin-GaAs/n⁺-Si and pin-GaAs/GaAs without QDs. The results reveal the clear contribution of the QDs layers to the improvement of the spectral response up to 1200 nm. The novel structure has been studied by X ray diffraction (XRD), photoluminescence spectroscopy (PL) and transmission electron microscopy (TEM). These results provide considerable insights into low cost III-V material-based solar cells.

摘要

本文报道了通过分子束外延（MBE）在纳米结构表面硅衬底上直接生长铟（镓）砷/砷化镓量子点（QD）太阳能电池的初步评估。与不含量子点的pin-砷化镓/n⁺-硅和pin-砷化镓/砷化镓相比，使用光电流光谱法评估了在异质结pin-砷化镓/n⁺-硅的本征区域插入40个铟砷/铟镓砷/砷化镓量子点层的效果。结果表明，量子点层对高达1200纳米的光谱响应改善有明显贡献。通过X射线衍射（XRD）、光致发光光谱（PL）和透射电子显微镜（TEM）对这种新型结构进行了研究。这些结果为基于III-V族材料的低成本太阳能电池提供了相当多的见解。