Department of Mechanical Engineering, Myongji University , 241, Geumhak-ro, Cheoin-gu, Yongin-si, Gyeonggi-do 449-728, Republic of Korea.
Department of Electrical and Computer Engineering, Seoul National University , 1 Gwanakro, Gwanak-gu, Seoul 08826, Republic of Korea.
Langmuir. 2017 Oct 31;33(43):12398-12403. doi: 10.1021/acs.langmuir.7b01080. Epub 2017 Oct 17.
In this study, we report the crystallinity effects of submicrometer titanium dioxide (TiO) nanotube (TNT) incorporated with silver (Ag) nanoparticles (NPs) on surface-enhanced Raman scattering (SERS) sensitivity. Furthermore, we demonstrate the SERS behaviors dependent on the plasmonic-photonic interference coupling (P-PIC) in the TNT-AgNP nanoarchitectures. Amorphous TNTs (A-TNTs) are synthesized through a two-step anodization on titanium (Ti) substrate, and crystalline TNTs (C-TNTs) are then prepared by using thermal annealing process at 500 °C in air. After thermally evaporating 20 nm thick Ag on TNTs, we investigate SERS signals according to the crystallinity and P-PIC on our TNT-AgNP nanostructures. (A-TNTs)-AgNP substrates show dramatically enhanced SERS performance as compared to (C-TNTs)-AgNP substrates. We attribute the high enhancement on (A-TNTs)-AgNP substrates with electron confinement at the interface between A-TNTs and AgNPs as due to the high interfacial barrier resistance caused by band edge positions. Moreover, the TNT length variation in (A-TNTs)-AgNP nanostructures results in different constructive or destructive interference patterns, which in turn affects the P-PIC. Finally, we could understand the significant dependency of SERS intensity on P-PIC in (A-TNTs)-AgNP nanostructures. Our results thus might provide a suitable design for a myriad of applications of enhanced EM on plasmonic-integrated devices.
在这项研究中,我们报告了亚微米二氧化钛(TiO)纳米管(TNT)掺入银(Ag)纳米颗粒(NPs)对表面增强拉曼散射(SERS)灵敏度的结晶度效应。此外,我们证明了在 TNT-AgNP 纳米结构中依赖于等离子体-光子干涉耦合(P-PIC)的 SERS 行为。非晶态 TNTs(A-TNTs)通过两步阳极氧化在钛(Ti)衬底上合成,然后通过在空气中 500°C 的热退火过程制备晶态 TNTs(C-TNTs)。在 TNTs 上热蒸发 20nm 厚的 Ag 后,我们根据结晶度和 P-PIC 研究了我们的 TNT-AgNP 纳米结构中的 SERS 信号。与(C-TNTs)-AgNP 基底相比,(A-TNTs)-AgNP 基底表现出明显增强的 SERS 性能。我们将(A-TNTs)-AgNP 基底上的高增强归因于 A-TNTs 和 AgNPs 之间界面处的电子限制,这是由于能带边缘位置引起的界面势垒电阻高。此外,(A-TNTs)-AgNP 纳米结构中 TNT 长度的变化导致不同的建设性或破坏性干涉模式,从而影响 P-PIC。最后,我们可以理解(A-TNTs)-AgNP 纳米结构中 SERS 强度对 P-PIC 的显著依赖性。因此,我们的结果可能为等离子体集成器件上增强 EM 的各种应用提供了合适的设计。