应变工程、高效激子光致发光以及未修饰 MoS 纳米片中的激子输运。
Strain engineering, efficient excitonic photoluminescence, and exciton funnelling in unmodified MoS nanosheets.
机构信息
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM-87131, United States.
出版信息
Nanoscale. 2017 Nov 9;9(43):16602-16606. doi: 10.1039/c7nr03537c.
PMID:29071328
Abstract
We established locally varying strain fields in unmodified MoS nanosheets. The approach relies on dry release in place of multilayer MoS on textured Si substrates. By this process we demonstrated intense photoluminescence, a ∼70 meV decrease of the transition energy, and exciton funneling in ∼4 nm-thick MoS films.
摘要
我们在未经修饰的 MoS 纳米片中建立了局部变化的应变场。该方法依赖于在纹理化的 Si 衬底上进行原位干法释放，而不是多层 MoS。通过该工艺，我们在厚度约为 4nm 的 MoS 薄膜中实现了强烈的光致发光、跃迁能量约 70meV 的降低以及激子漏斗效应。
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