Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, and School of Physics and Electronics, Hunan University, Changsha, 410082, Hunan, China.
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China.
Nat Commun. 2017 Dec 4;8(1):1906. doi: 10.1038/s41467-017-02093-z.
High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe/SnS vertical bilayer p-n junctions on SiO/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 A and a highest on-off ratio of up to 10. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.
高质量的二维原子层状 p-n 异质结对于高性能集成光电至关重要。迄今为止的研究主要局限于剥离和重新堆叠的薄片，而这种异质结的可控生长仍然是一个重大挑战。在这里，我们报告了在 SiO2/Si 衬底上直接通过范德华外延生长的大面积 WSe2/SnS 垂直双层 p-n 结，其横向尺寸可达毫米级。在单个异质结构双层上集成了多电极场效应晶体管。电输运测量表明，结的场效应晶体管具有超低的关态漏电流 10 A 和高达 10 的最高开-关比。光电特性表明具有显著的光响应，响应时间快至 500 μs，快于所有直接生长的垂直二维异质结构。高质量范德华结的直接生长标志着向高性能集成光电设备和系统迈出了重要一步。
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