Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, 215123, China.
Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China.
Nat Commun. 2017 Dec 8;8(1):1993. doi: 10.1038/s41467-017-02166-z.
Semiconductor-based surface-enhanced Raman spectroscopy (SERS) substrates represent a new frontier in the field of SERS. However, the application of semiconductor materials as SERS substrates is still seriously impeded by their low SERS enhancement and inferior detection sensitivity, especially for non-metal-oxide semiconductor materials. Herein, we demonstrate a general oxygen incorporation-assisted strategy to magnify the semiconductor substrate-analyte molecule interaction, leading to significant increase in SERS enhancement for non-metal-oxide semiconductor materials. Oxygen incorporation in MoS even with trace concentrations can not only increase enhancement factors by up to 100,000-fold compared with oxygen-unincorporated samples but also endow MoS with low limit of detection below 10 M. Intriguingly, combined with the findings in previous studies, our present results indicate that both oxygen incorporation and extraction processes can result in SERS enhancement, probably due to the enhanced charge-transfer resonance as well as exciton resonance arising from the judicious control of oxygen admission in semiconductor substrate.
基于半导体的表面增强拉曼光谱（SERS）基底代表了 SERS 领域的一个新前沿。然而，半导体材料作为 SERS 基底的应用仍然受到其低 SERS 增强和较差的检测灵敏度的严重阻碍，特别是对于非金属氧化物半导体材料。在此，我们展示了一种通用的氧掺入辅助策略，以放大半导体基底-分析物分子相互作用，从而显著提高非金属氧化物半导体材料的 SERS 增强。即使在痕量浓度下，MoS 中的氧掺入不仅可以将增强因子提高到比未掺入氧的样品高 10 万倍，而且还赋予 MoS 低至 10M 以下的检测限。有趣的是，结合先前研究的结果，我们的研究结果表明，氧的掺入和提取过程都可以导致 SERS 增强，这可能是由于巧妙控制半导体基底中氧的进入导致的电荷转移共振以及激子共振增强。
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