Dusanowski Ł, Holewa P, Maryński A, Musiał A, Heuser T, Srocka N, Quandt D, Strittmatter A, Rodt S, Misiewicz J, Reitzenstein S, Sęk G
Opt Express. 2017 Dec 11;25(25):31122-31129. doi: 10.1364/OE.25.031122.
We report on the experimental demonstration of triggered single-photon emission at the telecom O-band from In(Ga)As/GaAs quantum dots (QDs) grown by metal-organic vapor-phase epitaxy. Micro-photoluminescence excitation experiments allowed us to identify the p-shell excitonic states in agreement with high excitation photoluminescence on the ensemble of QDs. Hereby we drive an O-band-emitting GaAs-based QD into the p-shell states to get a triggered single photon source of high purity. Applying pulsed p-shell resonant excitation results in strong suppression of multiphoton events evidenced by the as measured value of the second-order correlation function at zero delay of 0.03 (and ~0.005 after background correction).
我们报道了通过金属有机气相外延生长的In(Ga)As/GaAs量子点(QDs)在电信O波段触发单光子发射的实验演示。微光致发光激发实验使我们能够识别与量子点集合上的高激发光致发光一致的p壳层激子态。据此,我们将基于GaAs的O波段发射量子点驱动到p壳层态,以获得高纯度的触发单光子源。应用脉冲p壳层共振激发导致多光子事件的强烈抑制,这由零延迟时二阶相关函数的测量值0.03(背景校正后约为0.005)证明。