State Key Lab of Crystal Materials, Shandong University , Jinan 250100, Shandong, P. R. China.
ACS Appl Mater Interfaces. 2018 Jan 24;10(3):2574-2580. doi: 10.1021/acsami.7b16416. Epub 2018 Jan 8.
In this work, gallium nitride (GaN) nanowires (NWs) were synthesized by chemical vapor deposition (CVD) process. The hybrid electrode showed the capacity up to 486 mAh g after 400 cycles at 0.1 A g. Even at 10 A g, the reversible capacity can stabilize at 75 mAh g (after 1000 cycles). Pseudocapacitive capacity was defined by kinetics analysis. The dynamics analysis and electrochemical reaction mechanism of GaN with Li was also analyzed by ex situ XRD, HRTEM, and XPS results. These results not only cast new light on pseudocapacitance enhanced high-rate energy storage devices by self-assembled nanoengineering but also extend the application range of traditional binary III/V semiconductors.
在这项工作中,通过化学气相沉积(CVD)工艺合成了氮化镓(GaN)纳米线(NWs)。在 0.1 A g 的电流密度下经过 400 次循环后,混合电极的容量高达 486 mAh g-1。即使在 10 A g 的电流密度下,可逆容量也可以稳定在 75 mAh g-1(经过 1000 次循环)。赝电容容量通过动力学分析来定义。通过原位 XRD、HRTEM 和 XPS 结果分析 GaN 与 Li 的动力学分析和电化学反应机理。这些结果不仅为通过自组装纳米工程增强赝电容的高速率储能器件提供了新的思路,而且扩展了传统二元 III/V 半导体的应用范围。