Sustainable Electronics Technologies, Department of Electronics and Computer Science, Faculty of Physical Science and Engineering, University of Southampton, Southampton, UK.
Research and Development Group, Hitachi, Ltd., 1-280 Higashikoigakubo, Kokubunji, Tokyo, 185-8601, Japan.
Sci Rep. 2018 Jan 10;8(1):250. doi: 10.1038/s41598-017-18579-1.
The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is considered to be triggered by just one electron or one hole, and its importance is recognised upon the aggressive scaling. However, the detailed nature of the charge trap remains to be investigated due to the difficulty to find out the exact device, which shows the RTN feature over statistical variations. Here, we show the RTN can be observed from virtually all devices at low temperatures, and provide a methodology to enable a systematic way to identify the bias conditions to observe the RTN. We found that the RTN was observed at the verge of the Coulomb blockade in the stability diagram of a parasitic Single-Hole-Transistor (SHT), and we have successfully identified the locations of the charge traps by measuring the bias dependence of the RTN.
先进的金属氧化物半导体场效应晶体管（MOSFET）中的随机电报噪声（RTN）被认为仅由一个电子或一个空穴触发，并且在积极的缩放时认识到其重要性。然而，由于难以找到显示 RTN 特征的精确设备，因此仍然需要研究电荷陷阱的详细性质，该特征具有统计变化。在这里，我们表明 RTN 可以在低温下从几乎所有设备中观察到，并提供一种方法来启用一种系统的方法来确定观察 RTN 的偏置条件。我们发现，RTN 在寄生单孔晶体管（SHT）的稳定性图中的库仑阻塞边缘处被观察到，并且我们已经通过测量 RTN 的偏置依赖性成功地识别了电荷陷阱的位置。
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