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用于提升有机场效应晶体管性能的界面平躺分子单层膜。

Interfacial Flat-Lying Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors.

机构信息

National Laboratory of Solid-State Microstructures School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , P. R. China.

Energy Materials and Surface Sciences Unit (EMSSU) , Okinawa Institute of Science and Technology Graduate University (OIST) 1919-1 Tancha , Onna-son, Kunigami-gun, Okinawa 904-0495 , Japan.

出版信息

ACS Appl Mater Interfaces. 2018 Jul 5;10(26):22513-22519. doi: 10.1021/acsami.8b07095. Epub 2018 Jun 19.

Abstract

Organic field-effect transistors (OFETs) are the most fundamental device units in organic electronics. Interface engineering at the semiconductor/dielectric interface is an effective approach for improving device performance, particularly for enhancing charge transport in conducting channels. Here, we report flat-lying molecular monolayers that exhibit good uniformity and high crystallinity at the semiconductor/dielectric interface, deposited through slow thermal evaporation. Transistor devices achieve high carrier mobility up to 2.80 cm V s, which represents a remarkably improvement in device performance compared with devices that are completely based on fast-evaporated films. Interfacial flat-lying monolayers benefit charge transport by suppressing the polarization of dipoles and narrowing the broadening of trap density of states. Our work provides a promising strategy for enhancing the performance of OFETs by using interfacial flat-lying molecular monolayers.

摘要

有机场效应晶体管(OFETs)是有机电子学中最基本的器件单元。半导体/介电界面的界面工程是一种提高器件性能的有效方法,特别是对于增强导电沟道中的电荷输运。在这里,我们报告了通过缓慢热蒸发沉积的在半导体/介电界面上表现出良好的均匀性和高结晶度的平面分子单层。晶体管器件实现了高达 2.80 cm V s 的高载流子迁移率,与完全基于快速蒸发膜的器件相比,这是器件性能的显著提高。界面平面分子单层通过抑制偶极子的极化和缩小陷阱态密度展宽来有利于电荷输运。我们的工作为通过使用界面平面分子单层来提高 OFET 的性能提供了一种有前途的策略。

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