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通过二维界面的精细原子尺度结构调节局部电导率

Tuning Local Electrical Conductivity via Fine Atomic Scale Structures of Two-Dimensional Interfaces.

作者信息

Zhang Shuai, Gao Lei, Song Aisheng, Zheng Xiaohu, Yao Quanzhou, Ma Tianbao, Di Zengfeng, Feng Xi-Qiao, Li Qunyang

机构信息

AML, Center for Nano and Micro Mechanics, Department of Engineering Mechanics , Tsinghua University , Beijing 100084 , China.

State Key Laboratory of Tribology , Tsinghua University , Beijing 100084 , China.

出版信息

Nano Lett. 2018 Sep 12;18(9):6030-6036. doi: 10.1021/acs.nanolett.8b02921. Epub 2018 Sep 4.

Abstract

Two-dimensional (2D) materials have seen a broad range of applications in electronic and optoelectronic applications; however, full realization of this potential hitherto largely hinges on the quality and performance of the electrical contacts formed between 2D materials and their surrounding metals/semiconductors. Despite the progress in revealing the charge injecting mechanisms and enhancing electrical conductance using various interfacial treatments, how the microstructure of contact interfaces affects local electrical conductivity is still very limited. Here, using conductive atomic force microscopy (c-AFM), for the first time, we directly confirm the conjecture that the electrical conductivity of physisorbed 2D material-metal/semiconductor interfaces is determined by the local electronic charge transfer. Using lattice-resolved conductivity mapping and first-principles calculations, we demonstrate that the electronic charge transfer, thereby electrical conductivity, can be fine-tuned by the topological defects of 2D materials and the atomic stacking with respect to the substrate. Our finding provides a novel route to engineer the electrical contact properties by exploiting fine atomic interactions; in the meantime, it also suggests a convenient and nondestructive means of probing subtle interactions along 2D heterogeneous interfaces.

摘要

二维(2D)材料在电子和光电子应用中有着广泛的应用;然而,迄今为止,这种潜力的充分实现很大程度上取决于二维材料与其周围金属/半导体之间形成的电接触的质量和性能。尽管在揭示电荷注入机制和使用各种界面处理提高电导率方面取得了进展,但接触界面的微观结构如何影响局部电导率仍然知之甚少。在这里,我们首次使用导电原子力显微镜(c-AFM)直接证实了这样一个推测,即物理吸附的二维材料-金属/半导体界面的电导率由局部电子电荷转移决定。通过晶格分辨电导率映射和第一性原理计算,我们证明电子电荷转移进而电导率可以通过二维材料的拓扑缺陷以及相对于衬底的原子堆叠来微调。我们的发现为通过利用精细的原子相互作用来设计电接触特性提供了一条新途径;同时,它也暗示了一种探测二维异质界面间微妙相互作用的便捷且无损的方法。

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