School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
Adv Mater. 2018 Dec;30(49):e1804020. doi: 10.1002/adma.201804020. Epub 2018 Oct 1.
A graphene-semiconductor heterojunction is very attractive for realizing highly sensitive phototransistors due to the strong absorption of the semiconductor layer and the fast charge transport in the graphene. However, the photoresponse is usually limited to a narrow spectral range determined by the bandgap of the semiconductor. Here, an organic heterojunction (C /pentacene) is incorporated on graphene to realize a broadband (405-1550 nm) phototransistor with a high gain of 5.2 × 10 and a response time down to 275 µs. The visible and near-infrared parts of the photoresponsivity (9127 A W @650 nm and 1800 A W @808 nm) come from the absorption of the organic layer and the graphene, respectively. For the first time, a bi-directional (positive and negative) photoresponse is demonstrated at different wavelengths, due to the opposite charge transfer direction of the photoexcited carriers enforced by the unique band alignment. Such tunability will enable new functionalities such as large-scale real-time optical image and infrared focal plane array detection in the future.
石墨烯-半导体异质结由于半导体层的强吸收和石墨烯中的快速电荷输运,对于实现高灵敏度光电晶体管非常有吸引力。然而,光响应通常限于由半导体带隙决定的窄光谱范围。在这里,在石墨烯上掺入有机异质结(C/pentacene),实现了具有 5.2×10 的高增益和低至 275 µs 的响应时间的宽带(405-1550nm)光电晶体管。光响应的可见和近红外部分(9127 A W @650nm 和 1800 A W @808nm)分别来自有机层和石墨烯的吸收。由于光激发载流子的电荷转移方向相反,由独特的能带排列强制,首次在不同波长下演示了双向(正和负)光响应。这种可调谐性将在未来实现大规模实时光学图像和红外焦平面阵列检测等新功能。