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用于体声波(BAW)声悬浮的薄膜压电材料。

Thin film piezoelectrics for bulk acoustic wave (BAW) acoustophoresis.

机构信息

Institute for Mechanical Systems (IMES), Department of Mechanical and Process Engineering, Swiss Federal Institute of Technology (ETH Zurich), Tannenstrasse 3, CH-8092 Zurich, Switzerland.

出版信息

Lab Chip. 2018 Dec 7;18(23):3655-3667. doi: 10.1039/c8lc00833g. Epub 2018 Oct 30.

Abstract

Acoustophoresis, the movement of particles with sound, has evolved as a promising handling tool for micrometer-sized particles. Recent developments in thin film deposition technologies have enabled the reproducible fabrication of thin film piezoelectric materials for miniaturized ultrasound transducers. In this study, we combine both technologies and present the first implementation of a thin film Pb(Zr,Ti)O (PZT) transducer as actuation source for bulk acoustic wave (BAW) acoustophoresis. The design and fabrication process was developed for thin film BAW (TFBAW) devices. High-quality piezoelectric layers were produced using Solmates SMP-800 pulsed laser deposition (PLD) equipment which enables wafer-level batch fabrication. Results from simulations and experiments enabled the characterization of different designs and the prediction of the pressure field inside the TFBAW device. Moreover, the acoustic streaming field was analyzed to determine critical particle diameters for acoustophoresis. Operation conditions were identified for the acoustophoretic unit operations particle concentration and sorting. The TFBAW device was able to generate a high acoustic pressure amplitude of 0.55 MPa at a low peak input voltage of 0.5 V. Overall, this study demonstrates that TFBAW devices have the potential of a miniaturized, predictable and reproducible acoustic particle manipulation at a low voltage for lab-on-a-chip applications.

摘要

声悬浮,即利用声波使粒子运动,已经发展成为一种有前途的微米级粒子处理工具。薄膜沉积技术的最新发展使可重复制造用于小型化超声换能器的薄膜压电材料成为可能。在这项研究中,我们结合了这两种技术,并首次实现了薄膜 Pb(Zr,Ti)O(PZT)换能器作为体声波(BAW)声悬浮的激励源。该设计和制造工艺是为薄膜 BAW(TFBAW)器件开发的。使用 Solmates SMP-800 脉冲激光沉积(PLD)设备生产出高质量的压电层,该设备能够实现晶圆级批量制造。模拟和实验结果使不同设计的特性化和 TFBAW 器件内部压力场的预测成为可能。此外,还分析了声流场以确定声悬浮的临界粒径。确定了用于声悬浮单元操作的操作条件,包括粒子浓度和分类。TFBAW 器件能够在低输入电压 0.5 V 时产生 0.55 MPa 的高声压幅度。总的来说,这项研究表明,TFBAW 器件有可能在低电压下实现小型化、可预测和可重复的声粒子操控,适用于芯片实验室应用。

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