二硫化钼与ZrO异质结处能带的研究。

Investigation of the Energy Band at the Molybdenum Disulfide and ZrO Heterojunctions.

作者信息

Liu Xinke, Hu Cong, Li Kuilong, Wang Wenjia, Li Zhiwen, Ao Jinping, Wu Jing, He Wei, Mao Wei, Liu Qiang, Yu Wenjie, Chung Ren-Jei

机构信息

College of Materials Science and Engineering, Shenzhen Key Laboratory of Micro-scale Optical Information Technology, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People's Republic of China.

School of Electronic and Information Engineering (Department of Physics), Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250353, People's Republic of China.

出版信息

Nanoscale Res Lett. 2018 Dec 17;13(1):405. doi: 10.1186/s11671-018-2825-6.

DOI:10.1186/s11671-018-2825-6

PMID:30560382

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6297076/

Abstract

The energy band alignment at the multilayer-MoS/ZrO interface and the effects of CHF plasma treatment on the band offset were explored using x-ray photoelectron spectroscopy. The valence band offset (VBO) and conduction band offset (CBO) for the MoS /ZrO sample is about 1.87 eV and 2.49 eV, respectively. While the VBO was enlarged by about 0.75 eV for the sample with CHF plasma treatment, which is attributed to the up-shift of Zr 3d core level. The calculation results demonstrated that F atoms have strong interactions with Zr atoms, and the valence band energy shift for the d-orbital of Zr atoms is about 0.76 eV, in consistent with the experimental result. This interesting finding encourages the application of ZrO as gate materials in MoS-based electronic devices and provides a promising way to adjust the band alignment.

摘要

利用X射线光电子能谱研究了多层MoS/ZrO界面处的能带排列以及CHF等离子体处理对带隙偏移的影响。MoS/ZrO样品的价带偏移（VBO）和导带偏移（CBO）分别约为1.87 eV和2.49 eV。对于经过CHF等离子体处理的样品，VBO增大了约0.75 eV，这归因于Zr 3d核心能级的上移。计算结果表明，F原子与Zr原子有很强的相互作用，Zr原子d轨道的价带能量偏移约为0.76 eV，与实验结果一致。这一有趣的发现促进了ZrO在基于MoS的电子器件中作为栅极材料的应用，并为调整能带排列提供了一种有前景的方法。