Havryliuk Yevhenii, Selyshchev Oleksandr, Valakh Mykhailo, Raevskaya Alexandra, Stroyuk Oleksandr, Schmidt Constance, Dzhagan Volodymyr, Zahn Dietrich R T
V. E. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, Kyiv, 03028, Ukraine.
Semiconductor Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany.
Beilstein J Nanotechnol. 2019 Jan 17;10:222-227. doi: 10.3762/bjnano.10.20. eCollection 2019.
The effect of flash-lamp annealing (FLA) on the re-crystallization of thin films made of colloidal CuZnSnS nanocrystals (NCs) is investigated by Raman spectroscopy. Unlike similar previous studies of NCs synthesized at high temperatures in organic solvents, NCs in this work, which have diameters as small as 2-6 nm, were synthesized under environmentally friendly conditions in aqueous solution using small molecules as stabilizers. We establish the range of FLA conditions providing an efficient re-crystallization in the thin film of NCs, while preserving their kesterite structure and improving their crystallinity remarkably. The formation of secondary phases at higher FLA power densities, as well as the dependence of the formation on the film thickness are also investigated. Importantly, no inert atmosphere for the FLA treatment of the NCs is required, which makes this technology even more suitable for mass production, in particular for printed thin films on flexible substrates.
通过拉曼光谱研究了闪光灯退火(FLA)对由胶体CuZnSnS纳米晶体(NCs)制成的薄膜再结晶的影响。与之前在有机溶剂中高温合成纳米晶体的类似研究不同,本工作中的纳米晶体直径小至2 - 6纳米,是在环境友好条件下于水溶液中使用小分子作为稳定剂合成的。我们确定了能在纳米晶体薄膜中实现高效再结晶的FLA条件范围,同时保留其硫锡铜矿结构并显著提高其结晶度。还研究了在较高FLA功率密度下二次相的形成以及该形成对薄膜厚度的依赖性。重要的是,纳米晶体的FLA处理不需要惰性气氛,这使得该技术更适合大规模生产,特别是用于柔性基板上的印刷薄膜。