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高压下碳化氙中半导体和超导相的基态结构

Ground-state structure of semiconducting and superconducting phases in xenon carbides at high pressure.

作者信息

Bovornratanaraks Thiti, Tsuppayakorn-Aek Prutthipong, Luo Wei, Ahuja Rajeev

机构信息

Extreme Conditions Physics Research Laboratory (ECPRL) and Physics of Energy Materials Research Unit (PEMRU), Department of Physics, Faculty of Science, Chulalongkorn University, 10330, Bangkok, Thailand.

Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok, 10400, Thailand.

出版信息

Sci Rep. 2019 Feb 21;9(1):2459. doi: 10.1038/s41598-019-39176-4.

Abstract

The 'missing Xe paradox' is one of the phenomena at the Earth's atmosphere. Studying the 'missing Xe paradox' will provide insights into a chemical reaction of Xe with C. We search the ground-state structure candidates of xenon carbides using the Universal Structure Predictor: Evolutionary Xtallography (USPEX) code, which has been successfully applied to a variety of systems. We predict that XeC is the most stable among the convex hull. We find that the I[Formula: see text]2m structure of XeC is the semiconducting phase. Accurate electronic structures of tetragonal XeC have been calculated using a hybrid density functionals HSE06, which gives larger more accurate band gap than a GGA-PBE exchange-correlation functional. Specifically, we find that the I[Formula: see text]2m structure of XeC is a dynamically stable structure at high pressure. We also predict that the P6/mmm structure of XeC is the superconducting phase with a critical temperature of 38 K at 200 GPa. The ground-state structure of xenon carbides is of critical importance for understanding in the missing Xe. We discuss the inference of the stable structures of XeC. The accumulation of electrons between Xe and C led to the stability by investigating electron localization function (ELF).

摘要

“氙缺失悖论”是地球大气中的现象之一。研究“氙缺失悖论”将有助于深入了解氙与碳的化学反应。我们使用通用结构预测器:进化晶体学(USPEX)代码搜索碳化氙的基态结构候选物,该代码已成功应用于各种系统。我们预测XeC在凸包中是最稳定的。我们发现XeC的I[公式:见正文]2m结构是半导体相。使用混合密度泛函HSE06计算了四方XeC的精确电子结构,该泛函比GGA-PBE交换关联泛函给出更大、更准确的带隙。具体而言,我们发现XeC的I[公式:见正文]2m结构在高压下是动态稳定结构。我们还预测XeC的P6/mmm结构是超导相,在200 GPa时临界温度为38 K。碳化氙的基态结构对于理解氙缺失至关重要。我们讨论了XeC稳定结构的推断。通过研究电子定位函数(ELF),Xe和C之间电子的积累导致了稳定性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4f1d/6385371/f36233274c65/41598_2019_39176_Fig1_HTML.jpg

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