Fortin-Deschênes Matthieu, Jacobberger Robert M, Deslauriers Charles-Antoine, Waller Olga, Bouthillier Étienne, Arnold Michael S, Moutanabbir Oussama
Department of Engineering Physics, École Polytechnique de Montréal, C. P. 6079, Succursale Centre-Ville, Montréal, Québec, H3C 3A7, Canada.
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
Adv Mater. 2019 May;31(21):e1900569. doi: 10.1002/adma.201900569. Epub 2019 Apr 10.
Van der Waals (vdW) heterostructures have recently been introduced as versatile building blocks for a variety of novel nanoscale and quantum technologies. Harnessing the unique properties of these heterostructures requires a deep understanding of the involved interfacial interactions and a meticulous control of the growth of 2D materials on weakly interacting surfaces. Although several epitaxial vdW heterostructures have been achieved experimentally, the mechanisms governing their synthesis are still nebulous. With this perspective, herein, the growth dynamics of antimonene on graphene are investigated in real time. In situ low-energy electron microscopy reveals that nucleation predominantly occurs on 3D nuclei followed by a self-limiting lateral growth with morphology sensitive to the deposition rate. Large 2D layers are observed at high deposition rates, whereas lower growth rates trigger an increased multilayer nucleation at the edges as they become aligned with the Z2 orientation leading to atoll-like islands with thicker, well-defined bands. This complexity of the vdW growth is elucidated based on the interplay between the growth rate, surface diffusion, and edges orientation. This understanding lays the groundwork for a better control of the growth of vdW heterostructures, which is critical to their large-scale integration.
范德华(vdW)异质结构最近已被引入,作为各种新型纳米级和量子技术的通用构建块。要利用这些异质结构的独特特性,需要深入了解所涉及的界面相互作用,并精确控制二维材料在弱相互作用表面上的生长。尽管已经通过实验实现了几种外延vdW异质结构,但其合成机制仍然模糊不清。基于此观点,本文实时研究了锑烯在石墨烯上的生长动力学。原位低能电子显微镜显示,成核主要发生在三维核上,随后是自限性横向生长,其形态对沉积速率敏感。在高沉积速率下观察到大面积的二维层,而较低的生长速率会导致边缘处多层成核增加,因为它们与Z2取向对齐,形成具有更厚、边界清晰条带的环礁状岛屿。基于生长速率、表面扩散和边缘取向之间的相互作用,阐明了vdW生长的这种复杂性。这种理解为更好地控制vdW异质结构的生长奠定了基础,这对其大规模集成至关重要。