MoS/HfO界面处氮化对能带排列的研究。

Investigation of Nitridation on the Band Alignment at MoS/HfO Interfaces.

作者信息

Huan Ya-Wei, Liu Wen-Jun, Tang Xiao-Bing, Xue Xiao-Yong, Wang Xiao-Lei, Sun Qing-Qing, Ding Shi-Jin

机构信息

State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.

Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.

出版信息

Nanoscale Res Lett. 2019 May 29;14(1):181. doi: 10.1186/s11671-019-3020-0.

DOI:10.1186/s11671-019-3020-0

PMID:31144185

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6541675/

Abstract

The effect of nitridation treatment on the band alignment between few-layer MoS and HfO has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS/HfO with and without nitridation treatment were determined to be 2.09 ± 0.1 (2.41 ± 0.1) and 2.34 ± 0.1 (2.16 ± 0.1) eV, respectively. The tunable band alignment could be attributed to the Mo-N bonding formation and surface band bending for HfO triggered by nitridation. This study on the energy band engineering of MoS/HfO heterojunctions may also be extended to other high-k dielectrics for integrating with two-dimensional materials to design and optimize their electronic devices.

摘要

通过X射线光电子能谱研究了氮化处理对少层MoS与HfO之间能带排列的影响。经氮化处理和未经氮化处理的MoS/HfO的价带（导带）偏移分别确定为2.09±0.1（2.41±0.1）和2.34±0.1（2.16±0.1）eV。这种可调谐的能带排列可归因于氮化引发的Mo-N键形成以及HfO的表面能带弯曲。对MoS/HfO异质结能带工程的这项研究也可能扩展到其他高k电介质，以便与二维材料集成，从而设计和优化其电子器件。