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具有高增益的超灵敏混合MoS-ZnCdSe量子点光电探测器

Ultrasensitive Hybrid MoS-ZnCdSe Quantum Dot Photodetectors with High Gain.

作者信息

Zhang Shukui, Wang Xudong, Chen Yan, Wu Guangjian, Tang Yicheng, Zhu Liqing, Wang Haoliang, Jiang Wei, Sun Liaoxin, Lin Tie, Shen Hong, Hu Weida, Ge Jun, Wang Jianlu, Meng Xiangjian, Chu Junhao

机构信息

State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , 500 Yu Tian Road , Shanghai 200083 , China.

University of Chinese Academy of Sciences , 19 Yuquan Road , Beijing 100049 , China.

出版信息

ACS Appl Mater Interfaces. 2019 Jul 3;11(26):23667-23672. doi: 10.1021/acsami.9b03971. Epub 2019 Jun 11.

Abstract

Recently, two-dimensional (2D) materials, especially transition-metal dichalcogenides (TMDCs), have attracted extensive interest owing to their potential applications in optoelectronics. Here, we demonstrate a hybrid 2D-zero-dimensional (0D) photodetector, which consists of a single-layer or few-layer molybdenum disulfide (MoS) thin film and a thin layer of core/shell zinc cadmium selenide/zinc sulfide (ZnCdSe/ZnS) colloidal quantum dots (QDs). It is worth mentioning that the photoresponsivity of the hybrid 2D-0D photodetector is 3 orders of magnitude larger than the TMDC photodetector (from 10 to 10 A W). The detectivity of the hybrid structure detector is up to 10 Jones, and the gain is up to 10. Due to an effective energy transfer from the photoexcited QD sensitizing layer to MoS films, light absorption is enhanced and more excitons are generated. Thus, this hybrid 2D-0D photodetector takes advantage of high charge mobility in the MoS layer and efficient photon absorption/exciton generation in the QDs, which suggests their promising applications in the development of TMDC-based optoelectronic devices.

摘要

最近,二维(2D)材料,特别是过渡金属二硫化物(TMDCs),因其在光电子学中的潜在应用而引起了广泛关注。在此,我们展示了一种混合二维零维(0D)光电探测器,它由单层或几层二硫化钼(MoS)薄膜以及一层核壳结构的硒化锌镉/硫化锌(ZnCdSe/ZnS)胶体量子点(QDs)组成。值得一提的是,混合二维零维光电探测器的光响应度比TMDC光电探测器大3个数量级(从10到10 A W)。混合结构探测器的探测率高达10琼斯,增益高达10。由于从光激发的量子点敏化层到MoS薄膜的有效能量转移,光吸收增强,产生了更多的激子。因此,这种混合二维零维光电探测器利用了MoS层中的高电荷迁移率以及量子点中高效的光子吸收/激子产生,这表明它们在基于TMDC的光电器件开发中具有广阔的应用前景。

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