State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Qingdao 266580, Shandong, People's Republic of China. School of Materials Science and Engineering & College of Science, China University of Petroleum, Qingdao 266580, Shandong, People's Republic of China.
Nanotechnology. 2019 Oct 11;30(41):415203. doi: 10.1088/1361-6528/ab2e32. Epub 2019 Jul 1.
A simple hydrogenation treatment is used to synthesize unique oxygen-deficient TiO with a core/shell structure (TiO@TiOH), superior to the high H-pressure process (under 20 bar for five days). It is demonstrated that oxygen-deficient TiO nanoparticle film/Si heterojunction possesses improved photoresponse performance compared to the untreated TiO nanoparticle film/Si heterojunction. Particularly, under 900 nm of 0.5 μW cm, the oxygen-deficient TiO nanoparticle film (TiO@TiOH core-shell nanoparticle film)/Si heterojunction shows high responsivity (R) of 336 A W, prominent sensitivity (S) of 1.3 × 10 cm W, accompanied with a fast rise and decay time of 6 and 5 ms, respectively. Significantly, the detectivity (D*) of the photodetector is up to 1.17 × 10 cm Hz W, which is better than that reported in metal oxide nanomaterials/Si heterojunction photodetectors, and is 4-5 orders of magnitude higher than some 2D nanosheets/Si heterojunctions of 10-10 cm Hz W, indicating the excellent ability to detect weak signals. The oxygen vacancies generated in amorphous shell TiOH make the Fermi level of TiO shift near the conduction band minimum and can lead to reduced dark current. The high absorption and reduced dark current of the heterojunction ensure excellent photoresponse properties of oxygen-deficient TiO nanoparticle film/Si heterojunction. The H-reduced oxygen-deficient amorphous shell may be an excellent candidate to enhance the photoresponse performance of metal oxide/Si heterojunction.
采用简单的氢化处理合成具有核/壳结构(TiO@TiOH)的独特缺氧 TiO,优于高压工艺(在 20 巴下五天)。研究表明,与未经处理的 TiO 纳米颗粒膜/Si 异质结相比,缺氧 TiO 纳米颗粒膜/Si 异质结具有更好的光响应性能。特别是在 900nm 的 0.5μWcm 下,缺氧 TiO 纳米颗粒(TiO@TiOH 核壳纳米颗粒膜)/Si 异质结表现出 336A W 的高响应率(R)、1.3×10cmW 的高灵敏度(S),分别伴随着 6ms 和 5ms 的快速上升和下降时间。值得注意的是,该光电探测器的探测率(D*)高达 1.17×10cmHzW,优于金属氧化物纳米材料/Si 异质结光电探测器的报道值,比一些 2D 纳米片/Si 异质结的 10-10cmHzW 高 4-5 个数量级,表明其具有优异的弱信号检测能力。非晶壳 TiOH 中产生的氧空位使 TiO 的费米能级移近导带最小值,从而导致暗电流减小。异质结的高吸收和暗电流减小确保了缺氧 TiO 纳米颗粒膜/Si 异质结的优异光响应性能。H 还原的非晶态缺氧壳可能是增强金属氧化物/Si 异质结光响应性能的优秀候选材料。