Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam.
Faculty of Electrical & Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam.
Chemphyschem. 2019 Oct 2;20(19):2473-2481. doi: 10.1002/cphc.201900614. Epub 2019 Aug 27.
The revealing properties of transition metal (T)-doped graphene systems are investigated with the use of the first-principles method. The detailed calculations cover the bond length, position and height of adatoms, binding energy, atom-dominated band structure, adatom-induced free carrier density as well as energy gap, spin-density distributions, spatial charge distribution, and atom-, orbital- and spin-projected density-of-states (DOS). The magnetic configurations are clearly identified from the total magnetic moments, spin-split energy bands, spin-density distributions and spin-decomposed DOS. Moreover, the single- or multi-orbital hybridizations in T-C, T-T, and C-C bonds can be accurately deduced from the careful analyses of the above-mentioned physical quantities. They are responsible for the optimal geometric structure, the unusual electronic properties, as well as the diverse magnetic properties. All the doped systems are metals except for the low-concentration Ni-doped ones with semiconducting behavior. In contrast, ferromagnetism is exhibited in various Fe/Co-concentrations but only under high Ni-concentrations. Our theoretical predictions are compared with available experimental data, and potential applications are also discussed.
采用第一性原理方法研究了过渡金属(T)掺杂石墨烯体系的揭示性质。详细的计算涵盖了吸附原子的键长、位置和高度、结合能、原子主导的能带结构、吸附原子诱导的自由载流子密度以及能隙、自旋密度分布、空间电荷分布以及原子、轨道和自旋投影态密度(DOS)。从总磁矩、自旋分裂能带、自旋密度分布和自旋分解 DOS 中可以清楚地识别出磁构型。此外,通过仔细分析上述物理量,可以准确推断出 T-C、T-T 和 C-C 键中的单轨道或多轨道杂化。它们是优化的几何结构、异常电子性质以及多样化磁性质的原因。除了具有半导体行为的低浓度 Ni 掺杂体系外,所有掺杂体系都是金属。相比之下,各种 Fe/Co 浓度下都表现出铁磁性,但只有在高 Ni 浓度下才会表现出铁磁性。我们的理论预测与现有实验数据进行了比较,并讨论了潜在的应用。