Suppr超能文献

使用单层和多层石墨烯制造垂直范德华间隙阵列。

Fabrication of vertical van der Waals gap array using single-and multi-layer graphene.

机构信息

Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea.

出版信息

Nanotechnology. 2020 Jan 17;31(3):035304. doi: 10.1088/1361-6528/ab3dd2. Epub 2019 Aug 22.

Abstract

Arrays of van der Waals gaps were manufactured by synthesizing the vertically aligned graphene layer stacked between two copper (Cu) catalytic films. The Cu-graphene-Cu laminated structure was obtained by directly synthesizing graphene on a patterned Cu film followed by depositing a second copper layer for optical measurements. The synthesis of graphene on the Cu surface was optimized by adjusting the synthesis temperatures and pre-annealing time using plasma enhanced chemical vapor deposition (PECVD). Resonant Raman spectroscopy measurements reveal that graphene can be synthesized on both bulk Cu foil and relatively thin Cu film under the same growth mechanism using PECVD. Structural and optical characterizations of the array of graphene van der Waals gaps were implemented by the transmission electron microscope and terahertz-time domain spectroscopy (THz-TDS). In THz-TDS, the measured THz amplitude transmitted through the graphene van der Waals gap slit array was constant regardless of the gap width determined by the number of graphene layers between the Cu thin films in a single slit. These results imply that the optical dielectric constant of graphene at THz frequencies in the out-of-plane direction is linearly proportional to the gap width. Our results of the manufacturing method can be adopted to investigate mechanical, electrical, and optical properties of other 2D materials such as h-BN, MoS, and others. Furthermore, metal-graphene-metal structures with vertical orientations can be used in many electronic, optic, and optoelectronic applications.

摘要

通过在两个铜 (Cu) 催化薄膜之间堆叠垂直排列的石墨烯层来制造范德华间隙阵列。通过在图案化的 Cu 薄膜上直接合成石墨烯,然后沉积第二层铜用于光学测量,获得了 Cu-石墨烯-Cu 叠层结构。使用等离子体增强化学气相沉积 (PECVD) 通过调整合成温度和预退火时间来优化 Cu 表面上石墨烯的合成。共振拉曼光谱测量表明,使用 PECVD 可以在相同的生长机制下在块状 Cu 箔和相对较薄的 Cu 薄膜上合成石墨烯。通过透射电子显微镜和太赫兹时域光谱 (THz-TDS) 对范德华间隙阵列中石墨烯的结构和光学特性进行了表征。在 THz-TDS 中,通过石墨烯范德华间隙狭缝阵列传输的测量太赫兹振幅与单个狭缝中 Cu 薄膜之间的石墨烯层数决定的间隙宽度无关。这些结果表明,在垂直于平面方向的太赫兹频率下,石墨烯的光学介电常数与间隙宽度呈线性正比。我们的制造方法的结果可用于研究其他二维材料(如 h-BN、MoS 等)的机械、电气和光学性能。此外,具有垂直取向的金属-石墨烯-金属结构可用于许多电子、光学和光电应用。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验