金-锡催化生长锗锡纳米线：生长方向、结晶度和锡掺入

Au-Sn Catalyzed Growth of GeSn Nanowires: Growth Direction, Crystallinity, and Sn Incorporation.

作者信息

Sun Yong-Lie, Matsumura Ryo, Jevasuwan Wipakorn, Fukata Naoki

机构信息

International Center for Materials Nanoarchitectonics , National Institute for Materials Science , 1-1 Namiki , Tsukuba 305-0044 , Japan.

Institute of Applied Physics , University of Tsukuba , 1-1-1 Tennodai , Tsukuba 305-8573 , Japan.

出版信息

Nano Lett. 2019 Sep 11;19(9):6270-6277. doi: 10.1021/acs.nanolett.9b02395. Epub 2019 Aug 27.

DOI:10.1021/acs.nanolett.9b02395

PMID:31448621

Abstract

GeSn nanowires (NWs) have been a focus of research attention for their potential in realizing next-generation Si-compatible electronic and optoelectronic devices. To control the growth of NWs and increase their Sn content, the growth mechanism needs to be understood. The use of Au-Sn alloy catalysts instead of Au catalysts allows an easier understanding of GeSn NW growth, and the effects of Sn at different concentrations in catalysts on growth direction, Sn incorporation, and crystallinity of GeSn NWs can be clarified. High Sn content in Au-Sn alloy catalysts favors ⟨110⟩-oriented NW growth and high Sn incorporation in NWs. The higher Sn content in Au-Sn alloy catalysts also improves the crystallinity of NWs.

摘要

锗锡纳米线（NWs）因其在实现下一代与硅兼容的电子和光电器件方面的潜力而成为研究关注的焦点。为了控制纳米线的生长并增加其锡含量，需要了解其生长机制。使用金 - 锡合金催化剂而非金催化剂有助于更轻松地理解锗锡纳米线的生长，并且可以阐明催化剂中不同浓度的锡对锗锡纳米线的生长方向、锡掺入以及结晶度的影响。金 - 锡合金催化剂中的高锡含量有利于沿〈110〉取向生长纳米线，并使纳米线中掺入更多的锡。金 - 锡合金催化剂中较高的锡含量还提高了纳米线的结晶度。