Alhalaili Badriyah, Bunk Ryan, Vidu Ruxandra, Islam M Saif
Nanotechnology and Advanced Materials Program, Kuwait Institute for Scientific Research, Safat 13109, Kuwait.
Electrical and Computer Engineering, University of California, Davis, CA 95616, USA.
Nanomaterials (Basel). 2019 Sep 6;9(9):1272. doi: 10.3390/nano9091272.
In the last few years, interest in the use of gallium oxide (GaO) as a semiconductor for high power/high temperature devices and UV nano-sensors has grown. GaO has an enormous band gap of 4.8 eV, which makes it well suited for applications in harsh environments. In this work, we explored the effect of Ag thin film as a catalyst to grow gallium oxide. The growth of gallium oxide thin film and nanowires can be achieved by heating and oxidizing pure gallium at high temperatures (~1000 °C) in the presence of trace amounts of oxygen. We present the results of structural, morphological, and elemental characterization of the β-GaO thin film and nanowires. In addition, we explore and compare the sensing properties of the β-GaO thin film and nanowires for UV detection The proposed process can be optimized to a high scale production GaO nanocrystalline thin film and nanowires. By using Ag thin film as a catalyst, we can control the growth parameters to obtain either nanocrystalline thin film or nanowires.
在过去几年中，人们对使用氧化镓（GaO）作为高功率/高温器件和紫外纳米传感器的半导体的兴趣与日俱增。氧化镓具有4.8电子伏特的巨大带隙，这使其非常适合在恶劣环境中的应用。在这项工作中，我们探究了银薄膜作为催化剂对氧化镓生长的影响。氧化镓薄膜和纳米线的生长可以通过在微量氧气存在下于高温（约1000°C）加热和氧化纯镓来实现。我们展示了β-GaO薄膜和纳米线的结构、形态和元素表征结果。此外，我们探究并比较了β-GaO薄膜和纳米线用于紫外检测的传感特性。所提出的工艺可以优化至大规模生产GaO纳米晶薄膜和纳米线。通过使用银薄膜作为催化剂，我们可以控制生长参数以获得纳米晶薄膜或纳米线。
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