Huang Fei-Ting, Joon Lim Seong, Singh Sobhit, Kim Jinwoong, Zhang Lunyong, Kim Jae-Wook, Chu Ming-Wen, Rabe Karin M, Vanderbilt David, Cheong Sang-Wook
Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854, USA.
Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854, USA.
Nat Commun. 2019 Sep 16;10(1):4211. doi: 10.1038/s41467-019-11949-5.
Much of the dramatic growth in research on topological materials has focused on topologically protected surface states. While the domain walls of topological materials such as Weyl semimetals with broken inversion or time-reversal symmetry can provide a hunting ground for exploring topological interfacial states, such investigations have received little attention to date. Here, utilizing in-situ cryogenic transmission electron microscopy combined with first-principles calculations, we discover intriguing domain-wall structures in MoTe, both between polar variants of the low-temperature(T) Weyl phase, and between this and the high-T higher-order topological phase. We demonstrate how polar domain walls can be manipulated with electron beams and show that phase domain walls tend to form superlattice-like structures along the c axis. Scanning tunneling microscopy indicates a possible signature of a conducting hinge state at phase domain walls. Our results open avenues for investigating topological interfacial states and unveiling multifunctional aspects of domain walls in topological materials.
拓扑材料研究的许多显著进展都集中在拓扑保护的表面态上。虽然具有破缺反演或时间反演对称性的拓扑材料(如外尔半金属)的畴壁可以为探索拓扑界面态提供一个研究领域,但迄今为止这类研究很少受到关注。在这里,我们利用原位低温透射电子显微镜结合第一性原理计算,在碲化钼中发现了有趣的畴壁结构,这些结构既存在于低温(T)外尔相的极性变体之间,也存在于低温外尔相与高温高阶拓扑相之间。我们展示了如何用电子束操纵极性畴壁,并表明相畴壁倾向于沿c轴形成超晶格状结构。扫描隧道显微镜表明在相畴壁处可能存在导电铰链态的迹象。我们的结果为研究拓扑界面态和揭示拓扑材料中畴壁的多功能特性开辟了道路。