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简便制备具有增强热致变色性能的复合氧化钒薄膜。

Facile Fabrication of Composite Vanadium Oxide Thin Films with Enhanced Thermochromic Properties.

机构信息

School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu , 610054 Sichuan , People's Republic of China.

出版信息

ACS Appl Mater Interfaces. 2019 Oct 16;11(41):37617-37625. doi: 10.1021/acsami.9b11376. Epub 2019 Oct 3.

Abstract

In general, high-purity monoclinic VO (VO(M)) was considered as a prerequisite for obtaining VO-based thermochromic coatings with high performance. The coexistence of other vanadium oxides (such as VO and VO) in VO coatings was regarded as an unfavorable issue. Here, we investigate the microstructures and thermochromic properties of the composite vanadium oxide (CVO) thin films. The results demonstrate that the proper coexistence of high valent vanadium oxides (VO and VO) in VO-based films can remarkably enhance the thermochromic performance of films. The CVO thin films were prepared by a room-temperature sputtering process followed by a modified rapid annealing routine in air. The structural analyses (X-ray diffraction, Raman spectroscopy, and transmission electron microscopy) reveal the coexistence of VO(M), VO(M), and VO(O) in CVO thin films. The luminous transmittance () and solar modulation ability (Δ) of the CVO thin film obtained by an optimal preparation process are 1.93 and 1.34 times those of the pure polycrystalline VO thin film, respectively. Moreover, the CVO thin film exhibits lower semiconductor-to-metal transition temperature (60.8 °C) than the pure VO(M) thin film (67.9 °C). Furthermore, the fabrication process is well-reproducible, which is highly attractive for the mass production.

摘要

一般来说,高纯度单斜相 VO(VO(M))被认为是获得高性能 VO 基热致变色涂层的前提条件。VO 涂层中存在其他钒氧化物(如 VO 和 VO)被认为是不利的问题。在这里,我们研究了复合氧化钒(CVO)薄膜的微观结构和热致变色性能。结果表明,高价钒氧化物(VO 和 VO)在 VO 基薄膜中的适当共存可以显著提高薄膜的热致变色性能。CVO 薄膜是通过室温溅射工艺和改进的快速退火程序在空气中制备的。结构分析(X 射线衍射、拉曼光谱和透射电子显微镜)表明 CVO 薄膜中存在 VO(M)、VO(M)和 VO(O)的共存。通过优化制备工艺获得的 CVO 薄膜的光透过率()和太阳能调制能力(Δ)分别是纯多晶 VO 薄膜的 1.93 倍和 1.34 倍。此外,CVO 薄膜的半导体-金属转变温度(60.8°C)低于纯 VO(M)薄膜(67.9°C)。此外,该制造工艺具有良好的重现性,非常适合大规模生产。

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