Taniguchi Takaaki, Li Shisheng, Nurdiwijayanto Leanddas, Kobayashi Yu, Saito Tetsuki, Miyata Yasumitsu, Obata Seiji, Saiki Koichiro, Yokoi Hiroyuki, Watanabe Kenji, Taniguchi Takashi, Tsukagoshi Kazuhito, Ebina Yasuo, Sasaki Takayoshi, Osada Minoru
World Premier International Center for Materials Nanoarchitectonics (WPI-MANA) , National Institute for Materials Science(NIMS) , 1-1 Namiki , Tsukuba , Ibaraki 305-0044 , Japan.
Department of Physics , Tokyo Metropolitan University , Hachioji , Tokyo 192-0397 , Japan.
ACS Nano. 2019 Oct 22;13(10):11214-11223. doi: 10.1021/acsnano.9b04256. Epub 2019 Oct 7.
Heterostructures of two-dimensional (2D) atomic crystals provide fascinating molecular-scale design elements for emergent physical phenomena and functional materials, as integrating distinct monolayers into vertical heterostructures can afford coupling between disparate properties. However, the available examples have been limited to either van der Waals (vdW) or electrostatic (ES) heterostructures that are solely composed of noncharged and charged monolayers, respectively. Here, we propose a "vdW-ES heterostructure" chemical design in which charge-neutral and charged monolayer-building blocks with highly disparate chemical and physical properties are conjugated vertically through asymmetrically charged interfaces. We demonstrate vdW-ES heteroassembly of semiconducting MoS and dielectric CaNbO (CNO) monolayers using an amphipathic molecular starch, resulting in the emergence of trion luminescence observed at the lowest energy among MoS-related materials, probably due to interfacial confinement effects given by vdW-ES dual interactions. In addition, interface engineering leads to tailored exciton of the vdW/ES heterostructures owing to the pronounced dielectric proximity effects, bringing an intriguing interlayer chemistry to modify 2D materials. Furthermore, the current approach was successfully extended to create a graphene/CNO heterostructure, which verifies the versatility of the preparative method.
二维(2D)原子晶体的异质结构为新兴物理现象和功能材料提供了引人入胜的分子尺度设计元素,因为将不同的单分子层整合到垂直异质结构中可以实现不同性质之间的耦合。然而,现有的例子仅限于范德华(vdW)或静电(ES)异质结构,它们分别仅由不带电和带电的单分子层组成。在这里,我们提出了一种“vdW-ES异质结构”化学设计,其中具有高度不同化学和物理性质的电荷中性和带电单分子层构建块通过不对称带电界面垂直共轭。我们使用两亲性分子淀粉展示了半导体MoS和介电CaNbO(CNO)单分子层的vdW-ES异质组装,导致在MoS相关材料中观察到以最低能量出现的三重态激子发光,这可能是由于vdW-ES双重相互作用产生的界面限制效应。此外,由于明显的介电邻近效应,界面工程导致vdW/ES异质结构的定制激子,带来了有趣的层间化学以修饰二维材料。此外,目前的方法成功扩展到创建石墨烯/CNO异质结构,这验证了制备方法的通用性。