Suppr超能文献

用于具有摆动几何形状的三维硅结构的斜角等离子体蚀刻。

Oblique angled plasma etching for 3D silicon structures with wiggling geometries.

作者信息

Chang Bingdong

机构信息

DTU Nanolab, Technical University of Denmark, Ørsteds Plads, DK-2800, Kgs. Lyngby, Denmark.

出版信息

Nanotechnology. 2019 Nov 4;31(8):085301. doi: 10.1088/1361-6528/ab53fb.

Abstract

Three dimensional (3D) silicon micro- and nanostructures have attracted special research interest, particularly in photonic and electrochemical devices, due to the extra degrees of freedom for manipulation of device performance and properties. However, it is still considered to be difficult to fabricate 3D silicon structures with an arbitrary geometric form in a scalable volume, especially with standard fabrication techniques, which are intrinsically directional and anisotropic. In this work we proposed a unique method of oblique-angled plasma etching from various angles, thus multilayered silicon structures with wiggling geometries can be fabricated in a controllable manner both in micro- and nanoscale. The mechanism is explained as induced modifications of substrate topology and surface charging when a glass pad is attached on the sample surface, thus the incoming ion fluxes can be directed to the substrate surface with an off-normal angle. The process is convenient to perform without additional modifications on the plasma etching systems. At the same time, it provides more possibilities in the toolkit for fabricating 3D silicon structures with conventional fabrication technologies.

摘要

三维(3D)硅微纳结构因其在操纵器件性能和特性方面具有额外的自由度,在光子学和电化学器件等领域引起了特别的研究兴趣。然而,人们仍然认为,采用可扩展的体积来制造具有任意几何形状的3D硅结构是困难的,尤其是使用本质上具有方向性和各向异性的标准制造技术时。在这项工作中,我们提出了一种从不同角度进行斜角等离子体蚀刻的独特方法,从而可以在微米和纳米尺度上以可控的方式制造具有摆动几何形状的多层硅结构。其原理是,当在样品表面附着一个玻璃垫时,会引起衬底拓扑结构和表面电荷的改变,从而使入射离子通量能够以非垂直角度导向衬底表面。该过程操作方便,无需对等离子体蚀刻系统进行额外修改。同时,它为利用传统制造技术制造3D硅结构提供了更多的可能性。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验