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根据广义斐波那契序列和图厄 - 摩尔斯序列调整具有正折射率和负折射率材料的光子多层膜的能带结构。

Tuning band structures of photonic multilayers with positive and negative refractive index materials according to generalized Fibonacci and Thue-Morse sequences.

作者信息

Silva Bruno P, Costa Carlos H

机构信息

Universidade Federal do Ceará, Campus Avançado de Russas, 62900-000, Russas-CE, Brazil.

出版信息

J Phys Condens Matter. 2020 Mar 27;32(13):135703. doi: 10.1088/1361-648X/ab5ea2.

Abstract

We investigate the photonic band structure, using the transfer-matrix method, in one-dimensional structures composed of a dispersive metamaterial A juxtaposed with a non-dispersive dielectric B according to the generalized Fibonacci and Thue-Morse sequences, which are ruled and characterized by two positive integer numbers, p  and q. We present the band structures of different generations of these sequences for both TE and TM modes and discuss how they are affected by the p  and q parameters and the ratio between the thicknesses of the building blocks. We obtain a new and very important analytical expression for the frequency in which the average refraction index vanishes, i.e. when the [Formula: see text] gap condition is satisfied, and we investigate, in detail, the behavior of this emergent scale insensitive gap, as a function of the thicknesses ratio, for all structures considered. For the metamaterial considered, we show that the reduced frequency for [Formula: see text] converges faster or slower to 0.41 depending on the sequence. By adjusting the p  and q parameters, we can obtain a higher concentration of the pass bands inside (outside) the n   <  0 region when there are more (less) blocks A than B in the unit cell. Our results also show the presence of omnidirectional and complete band gaps, which have various practical and technological applications.

摘要

我们使用转移矩阵法研究了由色散超材料A与非色散电介质B根据广义斐波那契序列和图厄 - 摩尔斯序列并列组成的一维结构中的光子带结构,这些序列由两个正整数p和q控制并表征。我们给出了这些序列不同代对于TE和TM模式的带结构,并讨论了它们如何受到p和q参数以及构建块厚度比的影响。我们得到了一个新的且非常重要的解析表达式,用于表示平均折射率消失时的频率,即当满足[公式:见原文]能隙条件时,并且我们详细研究了这种新出现的与尺度无关的能隙对于所有考虑结构的厚度比的函数行为。对于所考虑的超材料,我们表明[公式:见原文]的约化频率根据序列更快或更慢地收敛到0.41。通过调整p和q参数,当晶胞中A块比B块更多(更少)时,我们可以在n < 0区域内(外)获得更高浓度的通带。我们的结果还表明存在全向和完全带隙,它们具有各种实际和技术应用。

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