Stathopoulos Spyros, Michalas Loukas, Khiat Ali, Serb Alexantrou, Prodromakis Themis
Electronic Materials & Devices Research Group Zepler Institute for Photonics and Nanoelectronics University of Southampton, SO17 1BJ, Southampton, UK.
Sci Rep. 2019 Dec 19;9(1):19412. doi: 10.1038/s41598-019-55322-4.
The emergence of memristor technologies brings new prospects for modern electronics via enabling novel in-memory computing solutions and energy-efficient and scalable reconfigurable hardware implementations. Several competing memristor technologies have been presented with each bearing distinct performance metrics across multi-bit memory capacity, low-power operation, endurance, retention and stability. Application needs however are constantly driving the push towards higher performance, which necessitates the introduction of a standard benchmarking procedure for fair evaluation across distinct key metrics. Here we present an electrical characterisation methodology that amalgamates several testing protocols in an appropriate sequence adapted for memristors benchmarking needs, in a technology-agnostic manner. Our approach is designed to extract information on all aspects of device behaviour, ranging from deciphering underlying physical mechanisms to assessing different aspects of electrical performance and even generating data-driven device-specific models. Importantly, it relies solely on standard electrical characterisation instrumentation that is accessible in most electronics laboratories and can thus serve as an independent tool for understanding and designing new memristive device technologies.
忆阻器技术的出现为现代电子学带来了新的前景,它能够实现新型的内存计算解决方案以及节能且可扩展的可重构硬件实现。目前已经出现了几种相互竞争的忆阻器技术,每种技术在多位存储容量、低功耗运行、耐久性、数据保持能力和稳定性等方面都有不同的性能指标。然而,应用需求不断推动着对更高性能的追求,这就需要引入一种标准的基准测试程序,以便对不同的关键指标进行公平评估。在此,我们提出一种电学表征方法,该方法以与技术无关的方式,按照适合忆阻器基准测试需求的适当顺序,融合了多种测试协议。我们的方法旨在提取有关器件行为各个方面的信息,从解读潜在的物理机制到评估电气性能的不同方面,甚至生成数据驱动的特定器件模型。重要的是,它仅依赖于大多数电子实验室都能使用的标准电学表征仪器,因此可以作为理解和设计新的忆阻器件技术的独立工具。