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电子陶瓷中的缺陷与异价掺杂工程

Defects and Aliovalent Doping Engineering in Electroceramics.

作者信息

Feng Yu, Wu Jiagang, Chi Qingguo, Li Weili, Yu Yang, Fei Weidong

机构信息

Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education , Harbin University of Science and Technology , Harbin 150080 , P. R. China.

State Key Laboratory of Advanced Welding and Joining , Harbin Institute of Technology , Harbin 150001 , P. R. China.

出版信息

Chem Rev. 2020 Feb 12;120(3):1710-1787. doi: 10.1021/acs.chemrev.9b00507. Epub 2020 Jan 3.

Abstract

Since the positive influences of defects on the performance of electroceramics were discovered, investigations concerning on defects and aliovalent doping routes have grown rapidly in the fields of inorganic chemistry and condensed matter physics. In this article, we summarized the types of defects in electroceramics as well as characterization tools of defects and highlighted the effects of intrinsic and extrinsic defects on the material performances with the emphasis on dielectric, ferroelectric, and piezoelectric properties. We mainly introduced defect related theoretical simulation and experimental results in several typical incipient ferroelectrics, ferroelectrics, and antiferroelectrics. Hence, the influences of defects on the crystal lattice were summed up, and then the main physical mechanisms were highlighted. Particularly, the performance enhancements of aliovalently doped electroceramics were also evaluated and reviewed. Finally, the outlook and challenges were discussed on the basis of their current developments. This article covers not only an overview of the state-of-the-art advances of defects and aliovalent doping routes in electroceramics but also the future prospects that may open another window to tune the electrical performance of electroceramics via intentionally introducing certain defects.

摘要

自从发现缺陷对电子陶瓷性能的积极影响以来,在无机化学和凝聚态物理领域,关于缺陷和异价掺杂途径的研究迅速增加。在本文中,我们总结了电子陶瓷中的缺陷类型以及缺陷的表征工具,并强调了本征和非本征缺陷对材料性能的影响,重点是介电、铁电和压电性能。我们主要介绍了几种典型的准铁电体、铁电体和反铁电体中与缺陷相关的理论模拟和实验结果。因此,总结了缺陷对晶格的影响,然后突出了主要物理机制。特别地,还对异价掺杂电子陶瓷的性能增强进行了评估和综述。最后,根据它们当前的发展情况讨论了前景和挑战。本文不仅涵盖了电子陶瓷中缺陷和异价掺杂途径的最新进展概述,还包括通过有意引入某些缺陷来调整电子陶瓷电学性能可能打开另一扇窗口的未来前景。

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