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电压控制的交换耦合复合多铁性微结构中的可调磁弹性效应

Tunable Magnetoelastic Effects in Voltage-Controlled Exchange-Coupled Composite Multiferroic Microstructures.

作者信息

Xiao Z, Lo Conte R, Goiriena-Goikoetxea M, Chopdekar R V, Lambert C-H A, Li X, N'Diaye A T, Shafer P, Tiwari S, Barra A, Chavez A, Mohanchandra K P, Carman G P, Wang K L, Salahuddin S, Arenholz E, Bokor J, Candler R N

机构信息

Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles 90095 , California , United States.

Advanced Light Source , Lawrence Berkeley National Laboratory , Berkeley 94720 , California , United States.

出版信息

ACS Appl Mater Interfaces. 2020 Feb 5;12(5):6752-6760. doi: 10.1021/acsami.9b20876. Epub 2020 Jan 27.

Abstract

The magnetoelectric properties of exchange-coupled Ni/CoFeB-based composite multiferroic microstructures are investigated. The strength and sign of the magnetoelastic effect are found to be strongly correlated with the ratio between the thicknesses of two magnetostrictive materials. In cases where the thickness ratio deviates significantly from one, the magnetoelastic behavior of the multiferroic microstructures is dominated by the thicker layer, which contributes more strongly to the observed magnetoelastic effect. More symmetric structures with a thickness ratio equal to one show an emergent interfacial behavior which cannot be accounted for simply by summing up the magnetoelastic effects occurring in the two constituent layers. This aspect is clearly visible in the case of ultrathin bilayers, where the exchange coupling drastically affects the magnetic behavior of the Ni layer, making the Ni/CoFeB bilayer a promising next-generation synthetic magnetic system entirely. This study demonstrates the richness and high tunability of composite multiferroic systems based on coupled magnetic bilayers compared to their single magnetic layer counterparts. Furthermore, because of the compatibility of CoFeB with present magnetic tunnel junction-based spintronic technologies, the reported findings are expected to be of great interest for the development of ultralow-power magnetoelectric memory devices.

摘要

研究了交换耦合的基于Ni/CoFeB的复合多铁性微结构的磁电性能。发现磁弹性效应的强度和符号与两种磁致伸缩材料的厚度比密切相关。当厚度比明显偏离1时,多铁性微结构的磁弹性行为由较厚的层主导,该层对观察到的磁弹性效应贡献更大。厚度比等于1的更对称结构表现出一种新的界面行为,这种行为不能简单地通过将两个组成层中发生的磁弹性效应相加来解释。在超薄双层的情况下,这一点很明显,其中交换耦合极大地影响了Ni层的磁行为,使Ni/CoFeB双层完全成为一种有前途的下一代合成磁系统。这项研究表明,与单磁层相比,基于耦合磁双层的复合多铁性系统具有丰富性和高度可调节性。此外,由于CoFeB与目前基于磁性隧道结的自旋电子技术的兼容性,预计所报道的研究结果对于超低功耗磁电存储器件的开发具有极大的意义。

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