Zhang Xinping, Wang Meng, Tang Fawei, Zhang Huanzhen, Fu Yulan, Liu Dong, Song Xiaoyan
Institute of Information Photonics Technology and College of Applied Sciences Beijing University of Technology Beijing 100124 P. R. China.
College of Materials Science and Engineering Beijing University of Technology Beijing 100124 P. R. China.
Adv Sci (Weinh). 2019 Nov 27;7(2):1902408. doi: 10.1002/advs.201902408. eCollection 2020 Jan.
Strong optical excitation of plasmonic nanostructures may induce simultaneous interband and intraband electronic transitions. However, interaction mechanisms between interband, intraband, and plasmon-band processes have not been thoroughly understood. In particular, optical-heating-induced lattice expansion, which definitely leads to shift of the Fermi level, has not been taken into account in plasmonic studies. Here, it is shown that plasmonic bandedge shift is responsible for the optical modulation on the boundary between plasmonic electron oscillation and interband transitions via investigations on gold nanofilms and nanoparticles. Strong optical excitation induces transient depletion of the conduction band just below the Fermi level through intraband transitions, while the subsequent lattice heating induces transient thermal expansion and hence lowers the Fermi level. Both effects reduce the threshold for interband transitions and therefore push the plasmonic bandedge to the red. These discoveries introduce a first correlation between plasmonic response and optical excitation induced thermal expansion of lattices. The revealed Fermi-level adjustment mechanism allows alignment of electronic levels at the metal-semiconductor interfaces, which applies to all conductive materials and renders reliable physics for the design of plasmonic or optoelectronic devices.
等离激元纳米结构的强光激发可能会同时引发带间和带内电子跃迁。然而,带间、带内和等离激元带过程之间的相互作用机制尚未得到充分理解。特别是,等离激元研究中尚未考虑光学加热引起的晶格膨胀,而这种膨胀肯定会导致费米能级的移动。在此,通过对金纳米薄膜和纳米颗粒的研究表明,等离激元带边移动是通过等离激元电子振荡和带间跃迁之间的边界上的光学调制引起的。强光激发通过带内跃迁导致费米能级以下导带的瞬态耗尽,而随后的晶格加热引起瞬态热膨胀,从而降低费米能级。这两种效应都降低了带间跃迁的阈值,因此将等离激元带边推向红光方向。这些发现首次揭示了等离激元响应与光学激发引起的晶格热膨胀之间的关联。所揭示的费米能级调节机制允许在金属 - 半导体界面处实现电子能级的对齐,这适用于所有导电材料,并为等离激元或光电器件的设计提供了可靠的物理依据。