Zhou Tianya, Xu Chuan, Liu Haopeng, Wei Qinwei, Wang Han, Zhang Jiangang, Zhao Tong, Liu Zhibo, Zhang Xuefeng, Zeng You, Cheng Hui-Ming, Ren Wencai
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P.R. China.
School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P.R. China.
ACS Nano. 2020 Mar 24;14(3):3121-3128. doi: 10.1021/acsnano.9b08169. Epub 2020 Feb 24.
Graphite film has many remarkable properties and intriguing applications from energy storage, electromagnetic interference (EMI) shielding, and thermal management to ultraviolet lithography. However, the existing synthesis methods require an extremely high processing temperature of ∼3000 °C and/or long processing time of typically hours. Here, we report an ultrafast synthesis of tens of nanometer-thick high-quality graphite films within a few seconds by quenching a hot Ni foil in ethanol. The vertical growth rate can reach over 64 nm s, which is more than 2 orders of magnitude higher than those of the existing methods. Moreover, the films show excellent electrical conductivity (∼2.6 × 10 S/m) and mechanical strength (∼110 MPa) comparable to or even better than those synthesized by chemical vapor deposition. As an example, we demonstrate the potential of these graphite films for effective EMI shielding, which show a record absolute shielding effectiveness of 481,000 dB cm g, outperforming all the reported synthetic materials.
石墨薄膜具有许多卓越的性能和引人入胜的应用,涵盖从能量存储、电磁干扰(EMI)屏蔽、热管理到紫外光刻等领域。然而,现有的合成方法需要高达约3000°C的极高加工温度和/或通常长达数小时的加工时间。在此,我们报告了一种通过在乙醇中淬火热镍箔,在几秒钟内超快合成数十纳米厚高质量石墨薄膜的方法。垂直生长速率可达64 nm/s以上,比现有方法高出两个数量级以上。此外,这些薄膜表现出优异的电导率(约2.6×10 S/m)和机械强度(约110 MPa),与化学气相沉积法合成的薄膜相当,甚至更优。例如,我们展示了这些石墨薄膜在有效EMI屏蔽方面的潜力,其绝对屏蔽效能达到创纪录的481,000 dB cm/g,优于所有已报道的合成材料。