Yan Guochao, Fan Xiaoping, Peng Miao, Yin Chang, Xiao Zhuoxi, Liang Yongchao
Ministry of Education Key Laboratory of Environment Remediation and Ecological Health, College of Environmental and Resource Sciences, Zhejiang University, Hangzhou, China.
Front Plant Sci. 2020 Mar 12;11:260. doi: 10.3389/fpls.2020.00260. eCollection 2020.
Salinity stress severely inhibits the growth of plant via ionic toxicity and osmotic constraint. Exogenous silicon (Si) can alleviate salinity stress, but the mechanisms behind remain unclear. To investigate the role of Si in alleviating ionic and osmotic components of salinity, rice ( L.) seedlings were grown hydroponically in iso-osmotic stress conditions developed from NaCl or polyethylene glycol (PEG). The effects of Si on the growth of shoot and root of rice under salinity and PEG-derived osmotic stress were evaluated and further compared using principal coordinate analysis (PCoA). We also analyzed the concentrations of Na, K, and compatible osmolytes, tissue sap osmotic potential, antioxidant enzymes activities, and the expression of aquaporin genes. Generally, Si significantly promoted shoot and root growth in rice exposed to both NaCl and PEG. PCoA shows that the Si-induced distance change under NaCl treatment was larger than that under PEG treatment in the shoot, while the Si-induced distance changes under NaCl and PEG treatments were at an equal level in the root. Under salinity, Si decreased Na concentration and Na/K ratio in the shoot but not in the root. However, Si decreased net Na uptake and increased root Na accumulation content. Osmotic potential was increased in the shoot but decreased in the root by Si addition. Si decreased soluble sugar and proline concentrations in the shoot but increased soluble sugar and soluble protein concentrations in the root. Besides, Si promoted shoot transpiration rate and root morphological traits. Although both NaCl and PEG treatments upregulated aquaporin gene expression, Si addition maintained the expression of s under NaCl and PEG treatments at same levels as control treatment. Furthermore, Si alleviated oxidative damages under both NaCl and PEG by regulating antioxidant enzyme activities. In summary, our results show that Si improves salt stress tolerance in rice by alleviating ionic toxicity and osmotic constraint in an organ-specific pattern. Si ameliorates ionic toxicity by decreasing Na uptake and increasing root Na reservation. Si alleviates osmotic constraint by regulating root morphological traits and root osmotic potential but not aquaporin gene expression for water uptake, and promoting transpiration force but not osmotic force in shoot for root-to-shoot water transport.
盐分胁迫通过离子毒性和渗透胁迫严重抑制植物生长。外源硅(Si)可以缓解盐分胁迫,但其背后的机制尚不清楚。为了研究硅在缓解盐分离子和渗透成分方面的作用,将水稻(L.)幼苗在由氯化钠(NaCl)或聚乙二醇(PEG)形成的等渗胁迫条件下进行水培。评估了硅对盐分和PEG诱导的渗透胁迫下水稻地上部和根部生长的影响,并使用主坐标分析(PCoA)进行进一步比较。我们还分析了钠、钾和相容性渗透溶质的浓度、组织液渗透势、抗氧化酶活性以及水通道蛋白基因的表达。总体而言,硅显著促进了暴露于NaCl和PEG的水稻地上部和根部的生长。PCoA表明,在地上部,NaCl处理下硅诱导的距离变化大于PEG处理,而在根部,NaCl和PEG处理下硅诱导的距离变化处于相同水平。在盐分胁迫下,硅降低了地上部的钠浓度和钠/钾比,但根部没有。然而,硅减少了钠的净吸收并增加了根部的钠积累含量。添加硅使地上部的渗透势增加,但根部的渗透势降低。硅降低了地上部的可溶性糖和脯氨酸浓度,但增加了根部的可溶性糖和可溶性蛋白浓度。此外,硅促进了地上部的蒸腾速率和根部的形态特征。虽然NaCl和PEG处理均上调了水通道蛋白基因的表达,但添加硅使NaCl和PEG处理下的s表达维持在与对照处理相同的水平。此外,硅通过调节抗氧化酶活性减轻了NaCl和PEG下的氧化损伤。总之,我们的结果表明,硅通过以器官特异性模式缓解离子毒性和渗透胁迫来提高水稻的耐盐胁迫能力。硅通过减少钠吸收和增加根部钠保留来改善离子毒性。硅通过调节根部形态特征和根部渗透势而非水通道蛋白基因表达来吸收水分,以及通过促进地上部的蒸腾拉力而非渗透力来进行根到地上部的水分运输,从而缓解渗透胁迫。