Ivanov Maxim S, Khomchenko Vladimir A, Silibin Maxim V, Karpinsky Dmitry V, Blawert Carsten, Serdechnova Maria, Paixão José A
CFisUC, Department of Physics, University of Coimbra, P-3004-516 Coimbra, Portugal.
MIREA-Russian Technological University "RTU MIREA", Moscow 119454, Russia.
Nanomaterials (Basel). 2020 May 14;10(5):940. doi: 10.3390/nano10050940.
In this work we demonstrate the role of grain boundaries and domain walls in the local transport properties of n- and p-doped bismuth ferrites, including the influence of these singularities on the space charge imbalance of the energy band structure. This is mainly due to the charge accumulation at domain walls, which is recognized as the main mechanism responsible for the electrical conductivity in polar thin films and single crystals, while there is an obvious gap in the understanding of the precise mechanism of conductivity in ferroelectric ceramics. The conductivity of the BiCaFeTiO (x = 0, 0.05, 0.1; δ = (0.05 - x)/2) samples was studied using a scanning probe microscopy approach at the nanoscale level as a function of bias voltage and chemical composition. The obtained results reveal a distinct correlation between electrical properties and the type of charged defects when the anion-deficient (x = 0) compound exhibits a three order of magnitude increase in conductivity as compared with the charge-balanced (x = 0.05) and cation-deficient (x = 0.1) samples, which is well described within the band diagram representation. The data provide an approach to control the transport properties of multiferroic bismuth ferrites through aliovalent chemical substitution.
在这项工作中,我们展示了晶界和畴壁在n型和p型掺杂铋铁氧体的局部输运性质中的作用,包括这些奇异点对能带结构空间电荷不平衡的影响。这主要是由于电荷在畴壁处积累,这被认为是极性薄膜和单晶中电导率的主要机制,而在铁电陶瓷中电导率的确切机制的理解上存在明显差距。使用扫描探针显微镜方法在纳米尺度上研究了BiCaFeTiO(x = 0, 0.05, 0.1;δ = (0.05 - x)/2)样品的电导率与偏置电压和化学成分的关系。所得结果表明,当缺阴离子(x = 0)的化合物与电荷平衡(x = 0.05)和缺阳离子(x = 0.1)的样品相比电导率增加三个数量级时,电学性质与带电缺陷类型之间存在明显的相关性,这在能带图表示中得到了很好的描述。这些数据提供了一种通过异价化学取代来控制多铁性铋铁氧体输运性质的方法。