Tominov Roman V, Vakulov Zakhar E, Avilov Vadim I, Khakhulin Daniil A, Fedotov Aleksandr A, Zamburg Evgeny G, Smirnov Vladimir A, Ageev Oleg A
Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, Russia.
Federal Research Centre, The Southern Scientific Centre of the Russian Academy of Sciences, 344006 Rostov-on-Don, Russia.
Nanomaterials (Basel). 2020 May 25;10(5):1007. doi: 10.3390/nano10051007.
We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition. The influence of post-growth annealing modes on the electroforming voltage and the resistive switching effect in ZnO nanocrystalline films is investigated. We demonstrated that nanocrystalline zinc oxide films, fabricated at certain regimes, show the electroforming-free resistive switching. It was shown, that the forming-free nanocrystalline ZnO film demonstrated a resistive switching effect and switched at a voltage 1.9 ± 0.2 V from 62.42 ± 6.47 () to 0.83 ± 0.06 kΩ (). The influence of ZnO surface morphology on the resistive switching effect is experimentally investigated. It was shown, that the ZnO nanocrystalline film exhibits a stable resistive switching effect, which is weakly dependent on its nanoscale structure. The influence of technological parameters on the resistive switching effect in a forming-free ZnO nanocrystalline film is investigated. The results can be used for fabrication of new-generation micro- and nanoelectronics elements, including random resistive memory (ReRAM) elements for neuromorphic structures based on forming-free ZnO nanocrystalline films.
我们通过实验研究了生长后退火对脉冲激光沉积制备的纳米晶ZnO薄膜的形貌、结构和电物理参数的影响。研究了生长后退火模式对ZnO纳米晶薄膜中电形成电压和电阻开关效应的影响。我们证明，在特定条件下制备的纳米晶氧化锌薄膜表现出无电形成的电阻开关特性。结果表明，无形成的纳米晶ZnO薄膜表现出电阻开关效应，在1.9±0.2 V的电压下从62.42±6.47（）切换到0.83±0.06 kΩ（）。通过实验研究了ZnO表面形貌对电阻开关效应的影响。结果表明，ZnO纳米晶薄膜表现出稳定的电阻开关效应，该效应与其纳米级结构的相关性较弱。研究了工艺参数对无形成ZnO纳米晶薄膜中电阻开关效应的影响。这些结果可用于制造新一代的微纳电子元件，包括基于无形成ZnO纳米晶薄膜的用于神经形态结构的随机电阻存储器（ReRAM）元件。
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