Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia.
Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China.
Molecules. 2020 Jun 18;25(12):2818. doi: 10.3390/molecules25122818.
In this paper, capacitance/conductance-voltage characteristics (C/G-V) under illumination was achieved to investigate the dynamic mechanism of stored charges in OLEDs with a structure of ITO/ PEDOT:PSS/PMMA/Alq/Al. For all devices, at least two peaks presented in the optical capacitance-voltage curve. Compared to curves of devices under dark, the first peak increased remarkably with a deviation to , which can be explained in the form of stored charges combined with the optical conductance characteristics. It was also found that a great decrease in capacitance is followed by the collapse of the first peak with PMMA thickness increased. It can account for the presence of interfacial charges, which is proved further by the conductance curves. To the device with 10 nm PMMA, a third peak took place in optical capacitance and it was due to the storage of electrons by PMMA. Also, the first capacitance peak enhanced approximate linearly as the illumination power increased, which can verify the contribution of the stored charges. Additionally, it shows the potential for the stored charges in optical detections.
本文通过电容/电导-电压特性(C/G-V)在光照下的测量,研究了具有 ITO/PEDOT:PSS/PMMA/Alq/Al 结构的 OLED 中存储电荷的动态机制。对于所有器件,在光学电容-电压曲线上至少出现了两个峰。与暗态下的曲线相比,第一峰显著增加,并向 偏离,可以用结合光学电导特性的存储电荷来解释。还发现,随着 PMMA 厚度的增加,电容会急剧下降,随后第一峰会崩溃。这可以解释界面电荷的存在,这也可以通过电导曲线进一步证明。对于具有 10nm PMMA 的器件,在光学电容中出现了第三个峰,这是由于 PMMA 存储了电子。此外,第一电容峰随着光照功率的增加近似线性增强,这可以验证存储电荷的贡献。此外,它还展示了在光学检测中存储电荷的潜力。