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Imaging microstructural dynamics and strain fields in electro-active materials in situ with dark field x-ray microscopy.

作者信息

Ormstrup Jeppe, Østergaard Emil V, Detlefs Carsten, Mathiesen Ragnvald H, Yildirim Can, Kutsal Mustafacan, Cook Philip K, Watier Yves, Cosculluela Carlos, Simons Hugh

机构信息

Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.

ESRF - The European Synchrotron, Avenue des Martyrs, 38000 Grenoble, France.

出版信息

Rev Sci Instrum. 2020 Jun 1;91(6):065103. doi: 10.1063/1.5142319.

Abstract

The electric-field-induced and temperature induced dynamics of domains, defects, and phases play an important role in determining the macroscopic functional response of ferroelectric and piezoelectric materials. However, distinguishing and quantifying these phenomena remains a persistent challenge that inhibits our understanding of the fundamental structure-property relationships. In situ dark field x-ray microscopy is a new experimental technique for the real space mapping of lattice strain and orientation in bulk materials. In this paper, we describe an apparatus and methodology for conducting in situ studies of thermally and electrically induced structural dynamics and demonstrate their use on ferroelectric BaTiO single crystals. The stable temperature and electric field apparatus enables simultaneous control of electric fields up to ≈2 kV/mm at temperatures up to 200 °C with a stability of ΔT = ±0.01 K and a ramp rate of up to 0.5 K/min. This capability facilitates studies of critical phenomena, such as phase transitions, which we observe via the microstructural change occurring during the electric-field-induced cubic to tetragonal phase transition in BaTiO at its Curie temperature. With such systematic control, we show how the growth of the polar phase front and its associated ferroelastic domains fall along unexpected directions and, after several cycles of electric field application, result in a non-reversible lattice strain at the electrode-crystal interface. These capabilities pave the way for new insights into the temperature and electric field dependent electromechanical transitions and the critical influence of subtle defects and interfaces.

摘要

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