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通过提高磁控金属辅助化学蚀刻中蚀刻方向的可控性实现硅的弯曲结构

Curved Structure of Si by Improving Etching Direction Controllability in Magnetically Guided Metal-Assisted Chemical Etching.

作者信息

Kim Tae Kyoung, Bae Jee-Hwan, Kim Juyoung, Cho Min Kyung, Kim Yu-Chan, Jin Sungho, Chun Dongwon

机构信息

Materials Science and Engineering, University of California at San Diego, 9500 Gilman Dr, La Jolla, CA 92093, USA.

Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea.

出版信息

Micromachines (Basel). 2020 Jul 30;11(8):744. doi: 10.3390/mi11080744.

Abstract

Metal-assisted chemical etching (MACE) is widely used to fabricate micro-/nano-structured Si owing to its simplicity and cost-effectiveness. The technique of magnetically guided MACE, involving MACE with a tri-layer metal catalyst, was developed to improve etching speed as well as to adjust the etching direction using an external magnetic field. However, the controllability of the etching direction diminishes with an increase in the etching dimension, owing to the corrosion of Fe due to the etching solution; this impedes the wider application of this approach for the fabrication of complex micro Si structures. In this study, we modified a tri-layer metal catalyst (Au/Fe/Au), wherein the Fe layer was encapsulated to improve direction controllability; this improved controllability was achieved by protecting Fe against the corrosion caused by the etching solution. We demonstrated curved Si microgroove arrays via magnetically guided MACE with Fe encapsulated in the tri-layer catalyst. Furthermore, the curvature in the curved Si microarrays could be modulated via an external magnetic field, indicating that direction controllability could be maintained even for the magnetically guided MACE of bulk Si. The proposed fabrication method developed for producing curved Si microgroove arrays can be applied to electronic devices and micro-electromechanical systems.

摘要

金属辅助化学蚀刻(MACE)因其简单性和成本效益而被广泛用于制造微/纳米结构硅。磁控MACE技术,即采用三层金属催化剂的MACE,旨在提高蚀刻速度,并利用外部磁场调整蚀刻方向。然而,由于蚀刻溶液对铁的腐蚀,随着蚀刻尺寸的增加,蚀刻方向的可控性会降低;这阻碍了该方法在制造复杂微硅结构方面的更广泛应用。在本研究中,我们对三层金属催化剂(Au/Fe/Au)进行了改进,其中铁层被封装以提高方向可控性;这种改进的可控性是通过保护铁免受蚀刻溶液引起的腐蚀来实现的。我们通过磁控MACE展示了封装在三层催化剂中的铁形成的弯曲硅微槽阵列。此外,弯曲硅微阵列中的曲率可以通过外部磁场进行调制,这表明即使对于块状硅的磁控MACE,方向可控性也可以保持。所提出的用于制造弯曲硅微槽阵列的制造方法可应用于电子器件和微机电系统。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/23e2/7463845/7f412389634f/micromachines-11-00744-g001.jpg

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