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调控二维过渡金属二硫族化合物中的量子自旋霍尔边缘态

Controlling the Quantum Spin Hall Edge States in Two-Dimensional Transition Metal Dichalcogenides.

作者信息

Pulkin Artem, Yazyev Oleg V

机构信息

Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.

National Centre for Computational Design and Discovery of Novel Materials MARVEL, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.

出版信息

J Phys Chem Lett. 2020 Sep 3;11(17):6964-6969. doi: 10.1021/acs.jpclett.0c00859. Epub 2020 Aug 12.

Abstract

Two-dimensional transition metal dichalcogenides (TMDs) of Mo and W in their 1T' crystalline phase host the quantum spin Hall (QSH) insulator phase. We address the electronic properties of the QSH edge states by means of first-principles calculations performed on realistic models of edge terminations of different stoichiometries. The QSH edge states show a tendency to have complex band dispersions and coexist with topologically trivial edge states. We nevertheless identify two stable edge terminations that allow isolation of a pair of helical edge states within the band gap of TMDs, with monolayer 1T'-WSe being the most promising material. We also characterize the finite-size effects in the electronic structure of 1T'-WSe nanoribbons. Our results provide guidance to the experimental studies and possible practical applications of QSH edge states in monolayer 1T'-TMDs.

摘要

处于1T'晶相的钼(Mo)和钨(W)的二维过渡金属二硫属化物(TMDs)呈现出量子自旋霍尔(QSH)绝缘相。我们通过对不同化学计量比的边缘终止的实际模型进行第一性原理计算,来研究QSH边缘态的电子性质。QSH边缘态呈现出具有复杂能带色散的趋势,并与拓扑平凡的边缘态共存。然而,我们确定了两种稳定的边缘终止方式,它们能够在TMDs的带隙内分离出一对螺旋边缘态,其中单层1T'-WSe是最有前景的材料。我们还表征了1T'-WSe纳米带电子结构中的有限尺寸效应。我们的结果为单层1T'-TMDs中QSH边缘态的实验研究和可能的实际应用提供了指导。

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