Salvatori Stefano, Pettinato Sara, Piccardi Armando, Sedov Vadim, Voronin Alexey, Ralchenko Victor
Engineering Faculty, Università Niccolò Cusano, Via don Gnocchi 3, 00166 Rome, Italy.
CNR-IMM Institute for Microelectronics and Microsystems, Via del Fosso del Cavaliere 100, 00133 Rome, Italy.
Materials (Basel). 2020 Aug 21;13(17):3697. doi: 10.3390/ma13173697.
Thin polycrystalline diamond films chemically vapor deposited on thinned silicon substrates were used as membranes for pressure sensor fabrication by means of selective chemical etching of silicon. The sensing element is based on a simple low-finesse Fabry-Pérot (FP) interferometer. The FP cavity is defined by the end-face of a single mode fiber and the diamond diaphragm surface. Hence, pressure is evaluated by measuring the cavity length by an optoelectronic system coupled to the single mode fiber. Exploiting the excellent properties of Chemical Vapor Deposition (CVD) diamond, in terms of high hardness, low thermal expansion, and ultra-high thermal conductivity, the realized sensors have been characterized up to 16.5 MPa at room temperature. Preliminary characterizations demonstrate the feasibility of such diamond-on-Si membrane structure for pressure transduction. The proposed sensing system represents a valid alternative to conventional solutions, overcoming the drawback related to electromagnetic interference on the acquired weak signals generated by standard piezoelectric sensors.
通过化学气相沉积在减薄硅衬底上制备的薄多晶金刚石膜,被用作通过对硅进行选择性化学蚀刻来制造压力传感器的膜。传感元件基于一个简单的低精细度法布里 - 珀罗(FP)干涉仪。FP 腔由单模光纤的端面和金刚石膜片表面界定。因此,通过与单模光纤耦合的光电系统测量腔长来评估压力。利用化学气相沉积(CVD)金刚石在高硬度、低热膨胀和超高热导率方面的优异性能,所实现的传感器在室温下已被表征至 16.5 MPa。初步表征证明了这种硅上金刚石膜结构用于压力传感的可行性。所提出的传感系统是传统解决方案的有效替代方案,克服了与标准压电传感器采集的微弱信号上的电磁干扰相关的缺点。