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极性酞菁 - 衬底界面的电子结构演化

Evolution of Electronic Structures of Polar Phthalocyanine-Substrate Interfaces.

作者信息

Mandal Subhankar, Mukherjee Manabendra, Hazra Satyajit

机构信息

Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata 700064, India.

Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064, India.

出版信息

ACS Appl Mater Interfaces. 2020 Oct 7;12(40):45564-45573. doi: 10.1021/acsami.0c12614. Epub 2020 Sep 24.

Abstract

The electronic structures and core-level spectra of chlorogallium phthalocyanine (ClGaPc) molecules of different thicknesses (submonolayer to multilayer) adsorbed on a polycrystalline Au substrate and a highly oriented pyrolytic graphite (HOPG) substrate, before and after thermal annealing, were investigated using photoelectron spectroscopic techniques for better understanding the charge-transfer properties. The energy-level diagrams (ELDs) of the ClGaPc thin films are found to evolve with film thickness, substrate nature, and thermal annealing. The interfacial dipole moment in the active Au substrate and the molecular dipole moment in the inactive HOPG substrate mainly dictate the ELD. Annealed monolayer films on both the substrates seem to adopt a similar well-ordered Cl-up orientated molecular organization, which is quite interesting, as it certainly indicates a substrate-nature-independent energy minimum configuration. The strong interaction of the active Au substrate gives rise to additional charge transfer and state transfer (of Ga) as evident from the formation of a former lowest unoccupied molecular orbital (F-LUMO) level in the highest occupied molecular orbital (HOMO) region and a low binding energy peak in the Ga 2p core level. The presence of strong F-LUMO and molecular-dipole-related HOMO levels in the predicted monolayer of well-ordered Cl-up oriented molecules on the Au and HOPG substrates, respectively, creates the optimum energy-level alignment (ELA) for both the systems, while the opposite shift of the vacuum levels in two different substrates makes the ionization potential (IP) for such a monolayer either minimum (on the Au substrate) or maximum (on the HOPG substrate), which is useful information for tuning the charge injection across the interface in organic semiconductor-based devices.

摘要

利用光电子能谱技术研究了吸附在多晶金衬底和高度取向热解石墨(HOPG)衬底上不同厚度(亚单层到多层)的氯镓酞菁(ClGaPc)分子在热退火前后的电子结构和芯能级光谱,以便更好地理解电荷转移特性。发现ClGaPc薄膜的能级图随薄膜厚度、衬底性质和热退火而变化。活性金衬底中的界面偶极矩和非活性HOPG衬底中的分子偶极矩主要决定了能级图。两种衬底上的退火单层膜似乎都采用了类似的有序的Cl朝上取向的分子组织,这非常有趣,因为它肯定表明了一种与衬底性质无关的能量最小构型。活性金衬底的强相互作用导致了额外的电荷转移和(Ga的)态转移,这从最高占据分子轨道(HOMO)区域中形成前最低未占据分子轨道(F-LUMO)能级以及Ga 2p芯能级中的低结合能峰可以明显看出。分别在金和HOPG衬底上预测的有序Cl朝上取向分子的单层中存在强F-LUMO和与分子偶极相关的HOMO能级,为两个系统创造了最佳的能级排列(ELA),而两种不同衬底中真空能级的相反移动使得这种单层的电离势(IP)要么最小(在金衬底上)要么最大(在HOPG衬底上),这对于调节基于有机半导体的器件中跨界面的电荷注入是有用的信息。

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